MICROWAVE ENHANCED SILICON KOH ETCHING

机译：微波增强硅酸钾蚀刻

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A microwave source system have been used to increase silicon etch rate in KOH solution by a factor of about 2, when compared to conventional process. In this work, using a commercial microwave oven (operated at 850W), a home-made microwave system and a polytetrafluoroethylene (PTFE) reactor, where the silicon etching is processed with KOH-water solution, were developed. Silicon wafers, previously oxidized and patterned with standard photo-lithographic process, were etched using 2.5, 5 and 10 M KOH-water solution. The process temperature was manually controlled. The etch solution passes through a heat exchanger for cooling purpose and is pumped back to the reactor. Etch rate of about 1.38 μm/min for the [100] silicon crystal plane and 2.7 nm/min for thermal silicon oxide was achieved.

机译：与传统工艺相比，已经使用微波源系统将KOH溶液中的硅蚀刻速率提高了约2倍。在这项工作中，开发了使用商用微波炉（工作于850W），自制的微波系统和聚四氟乙烯（PTFE）反应器，其中用KOH水溶液对硅进行蚀刻。使用2.5、5和10 M KOH水溶液蚀刻预先用标准光刻工艺氧化和图案化的硅晶片。工艺温度是手动控制的。蚀刻溶液通过用于冷却目的的热交换器，然后泵送回反应器。对于[100]硅晶体平面，蚀刻速率约为1.38μm/ min，对于热氧化硅，蚀刻速率约为2.7nm / min。

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《Proceedings vol.2005-08; International Symposium on Microelectronics Technology and Devices(SBMICRO 2005); 200509;》|2005年|P.408-415|共8页
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作者
C1ovis Fischer; Jose A. Diniz;
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作者单位

FEEC/CCS - State University of Campinas- UNICAMP-CP.6061-CEP.13083-970;

ESCOLA DE ENGENHARIA MAUA - CEUN MAUA - CEP. 09580-900;

UNIVERSIDADE SAO JUDAS TADEU - CEP. 03166-000;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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专利

1. Microwave enhanced wet anisotropic etching of silicon utilizing a memory effect of KOH activation - a remote E2MSi process [J] . Walczak R, Dziuban JA Sensors and Actuators, A. Physical . 2004,第1期

机译：利用KOH活化的记忆效应进行微波增强的硅湿法各向异性蚀刻-远程E2MSi工艺
2. Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH + IPA solutions [J] . Irena Zubel Sensors and Actuators, A. Physical . 2000,第1a2期

机译：碱性溶液中的硅各向异性刻蚀III：关于在KOH和KOH + IPA溶液中Si（100）各向异性刻蚀过程中形成空间结构的可能性
3. Silicon anisotropic etching in alkaline solutions III: On the possibility of spatial structures forming in the course of Si(100) anisotropic etching in KOH and KOH plus IPA solutions [J] . Zubel I. Sensors and Actuators, A. Physical . 2000,第1a2期

机译：碱性溶液中的硅各向异性蚀刻III：关于在KOH和KOH加IPA溶液中Si（100）各向异性蚀刻过程中形成空间结构的可能性
4. Remotely microwave-enhanced wet anisotropic etching of monocrystalline silicon utilizing a memory effect of microwave activation of KOH [C] . Rafal Walczak, Jan Dziuban Optoelectronic and Electronic Sensors Conference . 2003

机译：使用KOH微波激活的记忆效应，远程微波增强单晶硅的湿湿极蚀刻
5. An examination of the electrical and structural damage produced by magnetically enhanced reactive ion etching of polycrystalline silicon and silicon dioxide. [D] . Ditizio, Robert Anthony. 1993

机译：检查由磁性增强的多晶硅和二氧化硅的反应性离子蚀刻产生的电气和结构损坏。
6. Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant [O] . Ya Hu, Kui-Qing Peng, Lin Liu, -1

机译：通过以溶解氧为氧化剂的底物增强金属催化的硅化学刻蚀连续生产硅纳米线
7. Anisotropic etching of silicon in KOH + Triton X-100 for 45° micromirror applications [O] . Krzysztof P. Rola 2016

机译：在KOH + Triton X-100中对硅进行各向异性蚀刻，用于45°微镜应用
8. Fabrication of silicon field emission tips for vacuum microelectronics by KOH/Alcohol/Water etching. [R] . Hui, W. C., Hee, E., Ciarlo, D. 1990

机译：用KOH /醇/水蚀刻制备真空微电子的硅场发射尖端。

MICROWAVE ENHANCED SILICON KOH ETCHING

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