Fast and reliable processing of high-performance InGaAs 0.98-um laser diodes

机译：快速可靠地加工高性能InGaAs 0.98um激光二极管

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Abstract: e and highly reliable processing technique for ridge waveguide InGaAs/GaAs SQW lasers is proposed. The comparison is made with other more conventional processing sequences and the measurements indicate that the characteristics of the lasers obtained by this simple method are at least as good and sometimes even better than those made by using the other processing sequences. It also is shown that the simplicity of the process guarantees a high yield. The high performances of these lasers can be further optimized by applying optical coatings. !17

机译：摘要：提出了脊波导InGaAs / GaAs SQW激光器的一种高度可靠的加工技术。与其他更常规的处理序列进行比较，测量结果表明，通过这种简单方法获得的激光器的特性至少与使用其他处理序列所获得的激光器一样好，有时甚至更好。还表明该方法的简单性保证了高产率。这些激光的高性能可以通过应用光学涂层来进一步优化。！17

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《Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices》|1993年|p.23-30|共8页
会议地点 Los Angeles CA(US)
作者
F.Vermaerke; State Univ. of Ghent; Gent; Belgium; Peter Van Daele; State Univ. of Ghent; Gent; Belgium; G.Vermeire; State Univ. of Ghent; Gent; Belgium; Ingrid Moerman; Univ. of Gent; Gent; Belgium; Piet M. Demeester; State Univ. of Ghent; Gent; Belgium.;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Simple reliable processing technique for low-threshold high-power strained InGaAs-AlGaAs GRINSCH SQW laser diodes [J] . Vermaerke F., Moerman I. IEE Proceedings. Part J . 1993,第1期

机译：低阈值大功率InGaAs-AlGaAs GRINSCH SQW激光二极管的简单可靠的处理技术
2. High-power highly reliable 1.06 /spl mu/m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers [MOVPE] [J] . Yuda M., Temmyo J., Sasaki T., Electronics Letters . 2003,第8期

机译：通过InGaAs阱层的低温生长获得高功率，高可靠性的1.06 / splμm/ m InGaAs应变量子阱激光二极管[MOVPE]
3. High-performance InGaAs-GaAs-AlGaAs broad-area diode lasers with impurity-free intermixed active region [J] . Yan-Rui Zhao, Smolyakov G.A., Osinski M. IEEE journal of selected topics in quantum electronics . 2003,第5期

机译：具有无杂质混合有源区的高性能InGaAs-GaAs-AlGaAs广域二极管激光器
4. Fast and reliable processing of high-performance InGaAs 0.98-um laser diodes [C] . Author(s): F.Vermaerke State Univ. of Ghent Gent Belgium, Peter Van Daele, G.Vermeire State Univ. of Ghent Gent Belgium, Conference on processing and packaging of semiconductor lasers and optoelectronic devices . 1993

机译：快速可靠地处理高性能IngaAs 0.98-UM激光二极管
5. High-power near-resonant 1.55 micrometer-emitting InGaAsP/InP antiguided diode laser arrays. [D] . Bhattacharya, Arnab. 1997

机译：大功率近谐振1.55微米发射InGaAsP / InP反导二极管激光器阵列。
6. The LaserFIB: new application opportunities combining a high-performance FIB-SEM with femtosecond laser processing in an integrated second chamber [O] . Ben Tordoff, Cheryl Hartfield, Andrew J. Holwell, 2020

机译：LaserFib：新的应用机会将高性能FIB-SEM与集成的第二腔室中的飞秒激光加工结合起来
7. High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers [O] . Tansu, Nelson, Mawst, Luke J. 2001

机译：高性能应变补偿InGaas-Gaasp-Gaas（λ=1.17μm）量子阱二极管激光器
8. Organometallic Vapor Phase Epitaxy of High-Performance Strained-Layer InGaAs-AlGaAs Diode Lasers [R] . Wang, C. A., Choi, H. K. 1991

机译：高性能应变层InGaas-alGaas二极管激光器的有机金属气相外延

Fast and reliable processing of high-performance InGaAs 0.98-um laser diodes

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