1.3-um InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents

机译：1.3um InGaAsP / InP埋月牙激光器，阈值电流分布窄

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Abstract: w spread of threshold currents from 10.8 to 12.8 mA across a wafer has been demonstrated. To the best of our knowledge, this is the narrowest spread of threshold currents that has ever been reported for non-broad-area semiconductor lasers. From experimental results, it seems that the active width is probably the most important parameter in controlling the spread of threshold currents. !18

机译：摘要：已经证明了跨晶片的阈值电流从10.8 mA扩展到12.8 mA。据我们所知，这是非广域半导体激光器所报道的阈值电流的最窄分布。从实验结果看，有效宽度可能是控制阈值电流分布的最重要参数。！18

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《Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices》|1993年|p.31-39|共9页
会议地点 Los Angeles CA(US)
作者
Ching-Long Jiang; AMP Lytel Div.; Somerville; NJ; USA; Robert J. Miller; AMP Lytel Div.; Somerville; NJ; USA; Mark Soler; AMP Lytel Div.; Somerville; NJ; USA; Maria D. Ferreira; AMP Lytel Div.; Somerville; NJ; USA; Keith Wilder; AMP Lytel Div.; Somerville;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. InGaAsP-InP Nanoscale Waveguide-Coupled Microring Lasers With Submilliampere Threshold Current Using Cl_(2)-N_(2)-Based High-Density Plasma Etching [J] . Seoijin Park, Seong-Soo Kim, Liwei Wang, IEEE Journal of Quantum Electronics . 2005,第3期

机译：使用基于Cl_（2）-N_（2）的高密度等离子体刻蚀具有亚毫安阈值电流的InGaAsP-InP纳米级波导耦合微环激光器
2. Number and length on the temperature sensitivity of the threshold current in InGaAsP-InP MQW lasers [J] . Prosyk K., Simmons J.G. IEEE Journal of Quantum Electronics . 1998,第3期

机译：InGaAsP-InP MQW激光器中阈值电流的温度灵敏度的数量和长度
3. Temperature characteristics of threshold current in InGaAsP/InP double‐heterostructure lasers [J] . Journal of Applied Physics . 1980,第8期

机译：InGaAsP / InP双异质结构激光器中阈值电流的温度特性
4. 1.3-um InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents [C] . Ching-Long Jiang, Robert J. Miller, Mark Soler, Conference on processing and packaging of semiconductor lasers and optoelectronic devices . 1993

机译：1.3-um IngaASP / InP埋入新月激光器，阈值电流的狭窄传播
5. High operating temperature of passively mode-locked InGaAsP/InP semiconductor lasers [D] . Tan, Wei Kiong. 2005

机译：被动锁模InGaAsP / InP半导体激光器的高工作温度
6. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition [O] . Ludovico Megalini, Simone Tommaso Šuran Brunelli, William O. Charles, 2018

机译：应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的（001）图案化Si衬底上生长的InP的缺陷
7. Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration [O] . Koren U., Hasson A., Yu K. L., 1982

机译：具有微裂镜的低阈值InGaAsP / InP激光器，适合单片集成
8. Temperature Dependence of Threshold Current Density Jth and DifferentialEfficiency Nd of High-Power InGaAsP/GaAs (Lambda = 0.8 Microns) Lasers [R] . Yi, H. J., Diaz, J., Eliashevich, I., 1995

机译：高功率InGaasp / Gaas（λ= 0.8微米）激光器的阈值电流密度Jth和微分效率Nd的温度依赖性

1.3-um InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents

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