Synthesis of Aligned ZnO Hexagonal Nanorods and Its Application to ZnS Based DC Electroluminescent Devices

机译：对准的ZnO六角形纳米棒的合成及其在ZnS基直流电致发光器件中的应用

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Highly oriented ZnO nanorods have been grown on p~--Si(111) wafers using a low-pressure thermal CVD method. X-ray diffraction shows that the nanorods are grown with the c-axis normal to the substrate. An electroluminescent device with ITO/ZnS:Mnanorod-ZnO/p~--Si structure where the ZnS:Mn and ITO layers are deposited by the electron beam deposition method on the ZnO nanorods layer operates stably in DC mode with high luminance.

机译：使用低压热CVD方法在p --- Si（111）晶圆上生长了高度取向的ZnO纳米棒。 X射线衍射表明，纳米棒的生长方向是垂直于基材的c轴。具有ITO / ZnS：Mn / nanorod-ZnO / p --- Si结构的电致发光器件，其中通过电子束沉积方法在ZnO纳米棒层上沉积ZnS：Mn和ITO层，并以高亮度的DC模式稳定运行。

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来源
《Progress in Compound Semiconductor Materials III: Electronic and Optoelectronic Applications》|2003年|P.311-316|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Takashi Hirate; Hironori Tanaka; Shinya Sasaki; Makoto Ozawa; Weichi Li; Tomomasa Satoh;
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作者单位

Faculty of Engineering, Kanagawa University, Yokohama, 221-8686, Japan;

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原文格式 PDF
正文语种 eng
中图分类材料;
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Synthesis of Aligned ZnO Hexagonal Nanorods and Its Application to ZnS Based DC Electroluminescent Devices

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