首页> 外文会议>Progress in electromagnetics research symposium 2008 (PIERS 2008) >Coplanar Waveguide with Elevated Center Strip Conductor Based on HR-Si Substrate
【24h】

Coplanar Waveguide with Elevated Center Strip Conductor Based on HR-Si Substrate

机译:基于HR-Si基板的高中心带状导体共面波导

获取原文
获取原文并翻译 | 示例

摘要

In this paper, an elevated CPW based on high-resistivity silicon is presented. The center strip conductor is elevated on a silicon dioxide layer which can be easily fabricated by thermal oxidation. This extra silicon dioxide layer under the center strip conductor weakens the magnetic-field, which could be validated by the HFSS simulation. Compared with the conven-tional CPW with the center strip and ground planes on the same plane, the elevated CPW's insertion loss can be decreased. The simulated and measured results are in good agreement. And the process flow is compatible with the mainstreamed CMOS technology.
机译:在本文中,提出了一种基于高电阻率硅的升高的CPW。中心带状导体在二氧化硅层上升高,该二氧化硅层可以通过热氧化容易地制造。中心带状导体下方的额外二氧化硅层会削弱磁场,这可以通过HFSS仿真来验证。与中心带和地平面在同一平面上的常规CPW相比,可以减少升高的CPW的插入损耗。仿真和测量结果吻合良好。而且处理流程与主流的CMOS技术兼容。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号