Abstract: High quality YBa$-2$/Cu$-3$/O$-7$MIN@x$/ormal-metal/YBa$- 2$/Cu$-3$/O$-7$MIN@x$/ edge-geometry weak links have been fabricated with high yield using nonsuperconducting Y-Ba-Cu-O barriers layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25 - 100 angstroms thick barrier layers exhibit current-voltage characteristics consistent with the resistively-shunted-junction (RSJ) model, as well as ac Josephson steps. Magnetic field modulation of the critical currents shows Fraunhofer-like behavior with a periodicity which scales with device area. The critical currents vary exponentially with barrier thickness, ranging from approximately 5 $MUL 10$+3$/ to 5 $MUL 10$+5$/ A/cm$+2$/, indicating an effective normal metal coherence length of 20 angstroms. In addition, the average resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area. The scaling behavior of the device parameters combined with the well-behaved magnetic field modulation of the critical currents demonstrates good barrier layer uniformity with low pinhole densities. Near the transition temperature, the critical currents exhibit a temperature dependence proportional to (1 $MIN T/Tc)$+2$/.!30
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机译：摘要：高质量YBa $ -2 $ / Cu $ -3 $ / O $ -7 $ MIN @ x $ //普通金属/ YBa $ -2 $ / Cu $ -3 $ / O $ -7 $ MIN @使用在降低的生长温度下通过激光烧蚀沉积的非超导Y-Ba-Cu-O势垒层，可以高产量地制造x $ /边缘几何形状的薄弱环节。结合了25至100埃厚的势垒层的器件具有与电阻分流结（RSJ）模型以及ac Josephson阶跃一致的电流-电压特性。临界电流的磁场调制显示出类似于Fraunhofer的行为，其周期性随器件面积而缩放。临界电流随势垒厚度呈指数变化，范围从大约5 $ MUL 10 $ + 3 $ /到5 $ MUL 10 $ + 5 $ / A / cm $ + 2 $ /，表明有效的正常金属相干长度为20埃。此外，平均电阻与Y-Ba-Cu-O中间层厚度和器件面积成线性比例。器件参数的缩放行为与临界电流的行为良好的磁场调制相结合，证明了良好的势垒层均匀性和低针孔密度。在转变温度附近，临界电流表现出与（1 $ MIN T / Tc）$ + 2 $ /。！30成比例的温度依赖性。
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