Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;
Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China;
Light-emitting diodes; Resonant cavity; Surface roughening; Hydrothermal synthesis method; Zinc oxide;
机译:用于高效InGaN / GaN发光二极管的纳米级ITO / ZnO层纹理
机译:液相沉积(LPD)方法制备的织构氧化锌及其在提高650 nm谐振腔发光二极管(RCLED)的提取效率中的应用
机译:Al掺杂的ZnO透明导电层上具有周期性纹理化SiO2的GaN基发光二极管的增强光提取
机译:纳米级ZnO窗口层纹理的650nm谐振腔光二极管
机译:用于III型氮化物谐振腔发光二极管的电极的合成与表征。
机译:非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能
机译:包层腔对650 nm谐振腔发光二极管效率的影响