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Lithography-Free Synthesis of Freestanding Gold Nanoparticle Arrays Encapsulated Within Dielectric Nanowires

机译:封装在介电纳米线内的独立式金纳米颗粒阵列的无光刻合成

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A lithography-free method for producing freestanding one-dimensional gold nanoparticle arrays encapsulated within silicon dioxide nanowires is reported. Silicon nanowires grown by the vapor-liquid-solid technique with diameters ranging from 20 nm to 50 nm were used as the synthesis template. The gold nanoparticle arrays were obtained by coating the surface of the silicon nanowires with a 10 nm gold film, followed by thermal oxidation in an oxygen ambient. It was found that the thermal oxidation rate of the silicon nanowires was significantly enhanced by the presence of the gold thin film, which fully converted the silicon into silicon dioxide. The gold-enhanced oxidation process forced the gold into the core of the wire, forming a solid gold nanowire core surrounded by a silicon dioxide shell. Subsequent thermal treatment resulted in the fragmentation of the gold nanowire into a uniformly spaced array of gold nanoparticles encapsulated by a silicon dioxide shell, which was observed by in situ annealing in transmission electron microscopy. Analysis of many different silicon nanowire diameters shows that the diameter and spacing of the gold nanopaticles follows the Rayleigh instability, which confirms this is the mechanism responsible for formation of the nanoparticle array.
机译:报道了一种用于生产封装在二氧化硅纳米线内的独立的一维金纳米颗粒阵列的无光刻方法。通过汽-液-固技术生长的直径为20nm至50nm的硅纳米线被用作合成模板。通过用10nm金膜涂覆硅纳米线的表面,然后在氧气环境中进行热氧化来获得金纳米颗粒阵列。已经发现,金薄膜的存在显着提高了硅纳米线的热氧化速率,该金薄膜将硅完全转化为二氧化硅。金增强的氧化过程迫使金进入金属丝的芯,形成被二氧化硅壳包围的固态金纳米线芯。随后的热处理导致金纳米线破碎成被二氧化硅壳包封的均匀间隔的金纳米颗粒阵列,这通过透射电子显微镜中的原位退火观察到。对许多不同的硅纳米线直径的分析表明,金纳米颗粒的直径和间距遵循瑞利不稳定性,这证实了这是导致纳米颗粒阵列形成的机制。

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