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Quantum dots for single and entangled photon emitters

机译：单和纠缠光子发射器的量子点

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Efficient generation of polarized single or entangled photons is a crucial requirement for the implementation of quantum key distribution (QKD) systems. Self-organized semiconductor quantum dots (QDs) are capable of emitting one polarized photon or an entangled photon pair at a time using appropriate electrical current injection. We realized highly efficient single photon sources (SPS) based on well established semiconductor technology: In a pin structure a single electron and a single hole are funneled into a single InAs quantum dot using a submicron AlO_x current aperture. Efficient radiative recombination leads to emission of single polarized photons with an all-time record purity of the spectrum. Non-classicality of the emitted light without using additional spectral filtering is demonstrated. Out-coupling efficiency and emission rate are increased by embedding the SPS into a micro-cavity of Q = 140. The design of the micro-cavity is based on detailed modeling to optimize its performance. The resulting resonant single-QD diode generates single polarized photons at a repetition rate of 1 GHz exhibiting a second order correlation function of g~((2))(0) = 0.rnEventually, QDs grown on (111) oriented substrate are proposed as source of entangled photon pairs. Intrinsic symmetry-lowering effects leading to the splitting of the exciton bright states are shown to be absent for this substrate orientation. As a result the XX→ X → 0 recombination cascade of a QD can be used for the generation of entangled photons without further tuning of the finestructure splitting via QD size and/or shape. We present first micro-photoluminescence studies on QDs grown on (111) GaAs, demonstrating a fine structure splitting less than the spectral resolution of our set-up.
机译：偏振单光子或纠缠光子的有效生成是实现量子密钥分配（QKD）系统的关键要求。自组织半导体量子点（QD）能够使用适当的电流注入一次发射一个偏振光子或纠缠的光子对。我们基于成熟的半导体技术实现了高效的单光子源（SPS）：在引脚结构中，使用亚微米AlO_x电流孔径将单个电子和单个空穴集中到单个InAs量子点中。高效的辐射重组可产生具有历史记录的光谱纯度的单极化光子。证明了不使用附加光谱滤波的发射光的非经典性。通过将SPS嵌入Q = 140的微腔中，可以提高耦合效率和发射率。微腔的设计基于详细的模型来优化其性能。最终得到的谐振单QD二极管以1 GHz的重复频率生成单极化光子，表现出g〜（（2））（0）= 0的二阶相关函数。最后，提出了在（111）取向衬底上生长的QD。作为纠缠的光子对的来源。对于该衬底取向，没有导致激子亮态分裂的内在对称性降低效应。结果，QD的XX→X→0重组级联可以用于纠缠光子的生成，而无需进一步调整通过QD大小和/或形状分裂的精细结构。我们目前对在（111）GaAs上生长的量子点进行首次微光致发光研究，证明其精细结构的分裂小于我们装置的光谱分辨率。

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