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首页> 外文会议>Quantum dots and nanostructures: Synthesis, characterization, and modeling VII >Double tunnel ing-injection quantum dot laser: Effect of the wetting layer
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Double tunnel ing-injection quantum dot laser: Effect of the wetting layer

机译：双隧道注入量子点激光器：润湿层的作用

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摘要

Effect of the wetting layer (WL) on the output power of a double tunneling-injection (DTI) quantum dot (QD) laser is studied. Such a laser was proposed earlier to suppress bipolar population and hence electron-hole recombination outside QDs. In the Stranski-Krastanow growth mode, QDs are formed on an initially grown WL. The WL is directly connected to QDs by the processes of carrier capture and thermal escape. These processes are described in terms of the temporal cross-sections of electron and hole capture from the WL into QDs. The electron and hole densities and parasitic electron-hole recombination current density in the WL, and the output power of the device are calculated as functions of the temporal cross-sections. These calculations provide the basis for optimization of a DTI QD laser with the WL aimed at maximizing the output power. The larger the temporal cross-section of electron capture into QDs, the more efficient is the electron capture from the WL into QDs, and hence the higher is the output power. The smaller the temporal cross-section of hole capture into QDs, the less intensive is the hole thermal escape from QDs into the WL, the less intensive is the recombination in the WL, and hence the higher is the output power.
机译：研究了润湿层（WL）对双隧道注入（DTI）量子点（QD）激光器输出功率的影响。早先提出了这样的激光器以抑制双极种群并因此抑制QD外部的电子-空穴复合。在Stranski-Krastanow生长模式下，QD在最初生长的WL上形成。 WL通过载流子捕获和热逃逸过程直接连接到QD。这些过程是根据电子和空穴从WL捕获到QD中的时间截面来描述的。计算WL中的电子和空穴密度以及寄生的电子-空穴复合电流密度，以及器件的输出功率，作为时间截面的函数。这些计算为优化WL旨在最大化输出功率的DTI QD激光器提供了基础。电子捕获到QD中的时间截面越大，电子从WL捕获到QD中的效率就越高，因此输出功率也越高。空穴捕获到QD中的时间横截面越小，空穴从QD逃逸到WL的强度就越小，WL中复合的强度就越小，因此输出功率就越高。

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