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Improved performance of quantum cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum nitride heatsinks

机译：通过使用氮化铝散热器的可制造质量的外延侧面向下安装工艺，提高了量子级联激光器的性能

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We report substantially improved performance of high power quantum cascade lasers by utilizing epi-side down mounting that provides superior heat dissipation properties. We have obtained CW power output of 450 mW at 20℃ from mid-IR QCLs. The improved thermal management achieved with epi-side down mounting has also permitted us to carry out initial lifetime tests on the mid-IR QCLs. No degradation of power output is seen even after over 300 hours of CW operation at 25℃ with power output in excess of 300 mW. We believe these improvements should permit incorporation of mid-IR QCLs in reliable instrumentation.

机译：我们报告说，通过使用Epi面朝下安装可提供出色的散热性能，大功率量子级联激光器的性能得到了显着改善。我们从中红外QCL获得了在20℃时450 mW的CW功率输出。通过落射面朝下安装实现的改进的热管理也使我们能够对中红外QCL进行初始寿命测试。即使在25℃CW运行300小时以上且输出功率超过300 mW，也不会看到输出功率的下降。我们认为，这些改进应允许将中红外QCL纳入可靠的仪器中。

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《Quantum Sensing and Nanophotonic Devices III》|2006年|P.612702.1-612702.8|共8页
会议地点 San JoseCA(US)
作者
Alexei Tsekoun; Rowel Go; Michael Pushkarsky; Manijeh Razeghi; C. Kumar N. Patel;
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作者单位

Pranalytica, Inc., 1101 Colorado Avenue, Santa Monica, CA 90401;

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会议组织
原文格式 PDF
正文语种 eng
中图分类 TP212;
关键词
quantum cascade laser; epitaxial side down mounting; aluminum nitride;

机译：量子级联激光器；外延面朝下安装；氮化铝;

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专利

1. Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process [J] . Tsekoun A, Go R, Pushkarsky M, Proceedings of the National Academy of Sciences of the United States of America . 2006,第13期

机译：通过可扩展的，可制造的外延面朝下安装工艺，改善了量子级联激光器的性能
2. Epitaxial-Side Mounting of Terahertz Quantum- Cascade Lasers for Improved Heat Management [J] . Kruger, O., Kreutzmann, IEEE Photonics Technology Letters . 2013,第16期

机译：太赫兹量子级联激光器的外延侧安装，可改善热量管理
3. High-power epitaxial-side down mounted terahertz quantum cascade lasers [J] . Yuanyuan Li, Tao Wang, Shenqiang Zhai, Electronics Letters . 2016,第16期

机译：大功率外延侧向下安装的太赫兹量子级联激光器
4. Improved performance of quantum cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum nitride heatsinks [C] . Alexei Tsekoun, Rowel Go, Michael Pushkarsky, Conference on Quantum Sensing and Nanophotonic Devices . 2006

机译：利用氮化铝散热器，通过可制造的质量外延侧向下安装过程提高了量子级联激光器的性能
5. Novel layered semiconductor quantum structures in new material systems --- III-nitride quantum cascade emitters and detectors, light emission in Fe:ZnSe with quantum cascade laser pumping, theoretical methods with real-time Green's functions, and hyperbolic metamaterials. [D] . Song, Yu. 2014

机译：新材料系统中的新型分层半导体量子结构---氮化物量子级联发射器和检测器，具有量子级联激光泵浦的Fe：ZnSe发光，具有实时格林函数的理论方法以及双曲线超材料。
6. Improved performance of quantum cascade lasers through a scalable manufacturable epitaxial-side-down mounting process [O] . Alexei Tsekoun, Rowel Go, Michael Pushkarsky, 2006

机译：通过可扩展的可制造的外延面朝下安装工艺改善了量子级联激光器的性能
7. Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process [O] . Tsekoun, Alexei, Go, Rowel, Pushkarsky, Michael, 2006

机译：通过可扩展的，可制造的外延面朝下安装工艺，改善了量子级联激光器的性能
8. MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance. [R] . Wang, C. A., Schwarz, B., Siriani, D. F., 2017

机译：LWIR alInas / GaInas / Inp量子级联激光器的mOVpE生长：生长和材料质量对激光性能的影响。

Improved performance of quantum cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum nitride heatsinks

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