GaAs and GaN Based High Operating Temperature Spin Split-off Band Infrared Detectors

机译：基于GaAs和GaN的高工作温度自旋分离带红外探测器

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Recently developed high operating temperature (up to 330 K) GaAs/AlGaAs detectors responding in the 3-5 μm wavelength range and based on split-off (SO) transitions followed by escape by scattering to the light/heavy hole(LH/HH) band or by direct quantum mixing of the states offer a viable alternative to present day detectors operating at cryogenic temperatures. This paper presents a theoretical model to predict the response of SO detectors. The model calculates the dark current and illuminated currents from the photoabsorption, carrier escape, and transport, explaining the experimental response. Using this model, different strategies to improve the performance of the GaAs based SO detectors are presented. A graded barrier improves the performance by reducing the space charge build up, and the double barrier resonant structure by enhanced escape of holes from the SO to the light/heavy hole bands by bringing the two bands into resonance. A detailed analysis of the effect of detector parameters on responsivity and D~* is made. The change of material system to GaN/AlGaN should extend the response to longer wavelengths (THz) as its zinc blende and wurtzite crystal structures have SO transition energies of 20meV and 8meV respectively. Experimental measurement of SO absorption in GaN and potential THz detector designs are discussed.

机译：最近开发的高工作温度（高达330 K）GaAs / AlGaAs检测器在3-5μm波长范围内响应，并基于分离（SO）跃迁，然后通过散射到轻/重孔（LH / HH）逃逸谱带或通过状态的直接量子混合为当今在低温下运行的探测器提供了可行的替代方案。本文提出了一个理论模型来预测SO检测器的响应。该模型通过光吸收，载流子逸出和传输来计算暗电流和照明电流，从而解释了实验响应。使用该模型，提出了不同的策略来提高基于GaAs的SO检测器的性能。渐变势垒通过减少空间电荷的积累来提高性能，而双势垒谐振结构通过使两个能带共振，从而增强了空穴从SO到轻/重空穴带的逸出，从而提高了双能垒谐振结构。详细分析了探测器参数对响应度和D〜*的影响。材料系统向GaN / AlGaN的转变应将响应扩展到更长的波长（THz），因为其锌共混物和纤锌矿晶体结构的SO跃迁能分别为20meV和8meV。讨论了GaN中SO吸收的实验测量和潜在的THz检测器设计。

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《Quantum sensing and nanophotonic devices VII》|2010年|P.760823.1-760823.11|共11页
会议地点 San Francisco CA(US)
作者
A. G. Unil Perera; rnS. G. Matsik; rnM. S. Shishodia; rnR. C. Jayasinghe;
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Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA;

rnDepartment of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA;

rnDepartment of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA;

rnDepartment of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA;

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原文格式 PDF
正文语种 eng
中图分类 TP212;
关键词
split-off; infrared detector; GaAs/AlGaAs detector; GaN/AlGaN detector;

机译：分开;红外探测器GaAs / AlGaAs检测器； GaN / AlGaN检测器;

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专利

1. High operating temperature split-off band infrared detectors [J] . A. G. U. Perera, S. G. Matsik, P. V. V. Jayaweera, Applied Physics Letters . 2006,第13期

机译：高工作温度分离红外探测器
2. Spin split-off transition based IR detectors operating at high temperatures [J] . P.V.V. Jayaweera, S.G. Matsik, K. Tennakone, Infrared physics and technology . 2007,第2a3期

机译：基于旋转分离跃迁的红外探测器在高温下运行
3. Spin split-off transition based IR detectors operating at high temperatures [J] . P.V.V. Jayaweera, S.G. Matsik, K. Tennakone, Infrared Physics & Technology . 2007,第2a3期

机译：基于旋转分离跃迁的红外探测器在高温下运行
4. GaAs and GaN Based High Operating Temperature Spin Split-off Band Infrared Detectors [C] . A. G. Unil Perera, S. G. Matsik, M. S. Shishodia, SPIE Conference on Quantum Sensing and Nanophotonic Devices . 2010

机译：GaAs和GaN的高效温度自旋分流带红外探测器
5. Infrared and Terahertz Dual Band Semiconductor Development and Spin Orbitronics Based on Semiconductors and Insulators [D] . Zhang, Dainan 2018

机译：基于半导体和绝缘体的红外和太赫兹双频半导体开发和自旋Orbitronics
6. Recent Progress on Extended Wavelength and Split-Off Band Heterostructure Infrared Detectors [O] . Hemendra Ghimire, P. V. V. Jayaweera, Divya Somvanshi, 2020

机译：扩展波长和分离带异质结构红外探测器的最新进展
7. Analysis of Dark Current Mechanisms for Split-Off Band Infrared Detectors at High Temperatures [O] . Y. F. Lao, P. V. V. Jayaweera, Steven G. Matsik, 2015

机译：高温下分离带红外探测器暗电流机理分析
8. Device Modeling for Split-Off Band Detectors. [R] . Matsik, S. G., Jayaweera, P. V., Perera, A. G., 2009

机译：分离带检测器的器件建模。

GaAs and GaN Based High Operating Temperature Spin Split-off Band Infrared Detectors

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