60GHz and 80GHz wide band power amplifier MMICs in 90nm CMOS technology

机译：采用90nm CMOS技术的60GHz和80GHz宽带功率放大器MMIC

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60 GHz and 80 GHz-band power amplifier (PA) MMICs have been developed on a standard 90nm CMOS technology for use in RF front-ends of wide-band, low-cost communication and/or radar systems. A 60 GHz three-stage PA and a 80 GHz five-stage PA, both with single-ended architecture, have demonstrated saturated output powers of 12.6 dBm and 10.3 dBm with linear gains of 10.0 dB and 12.2 dB, respectively, the highest P_sat's reported to our best knowledge, under a 1.0 V power supply voltage. The PA's were designed with systematically shifted cut-off frequencies of individual high-pass-type matching circuits to simultaneously achieve wide-band operations, resulting in demonstrated 1dB-gain bandwidth of 17 GHz (55 GHz to 72 GHz), and 19 GHz (66 GHz to 85 GHz), respectively.

机译：60 GHz和80 GHz频段功率放大器（PA）MMIC已基于标准的90nm CMOS技术开发，用于宽带，低成本通信和/或雷达系统的RF前端。均具有单端架构的60 GHz三级PA和80 GHz五级PA的饱和输出功率分别为12.6 dBm和10.3 dBm，线性增益分别为10.0 dB和12.2 dB，是最高的P <据我们所知，sub> sat 是在1.0 V电源电压下得出的。该PA的设计是通过对各个高通型匹配电路的截止频率进行系统移位，以同时实现宽带工作，从而实现了17 GHz（55 GHz至72 GHz）和19 GHz（ 66 GHz至85 GHz）。

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来源
《Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009》|2009年|39-42|共4页
会议地点 Boston MA(US);Boston MA(US)
作者
Kurita N.; Kondoh H.;
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Central Res. Lab., Hitachi Ltd., Kokubunji, Japan;

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CMOS integrated circuits; MMIC power amplifiers; wideband amplifiers; CMOS technology; RF front-ends; bandwidth 17 GHz; bandwidth 19 GHz; bandwidth 55 GHz to 72 GHz; bandwidth 66 GHz to 85 GHz; frequency 60 GHz; frequency 80 GHz; gain 1 dB; gain 10 dB; gain 12.2 dB; high-pass-type matching circuit; low-cost communication; radar system; single-ended architecture; size 90 nm; voltage 1 V; wide band power amplifier MMIC; wide-band communication; CMOS; MMIC; power amplifier; single-end; wide band;

机译：CMOS集成电路; MMIC功率放大器;宽带放大器; CMOS技术; RF前端;带宽17 GHz;带宽19 GHz;带宽55 GHz至72 GHz;带宽66 GHz至85 GHz;频率60 GHz;频率80 GHz;增益1 dB;增益10 dB;增益12.2 dB;高通型匹配电路;低成本通信;雷达系统;单端架构;尺寸90 nm;电压1 V;宽带功率放大器MMIC;宽带通信CMOS MMIC功率放大器单端宽带;

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1. Low Power, Low Noise Amplifiers Design and Analysis for RF Receiver Front end Using 90NM CMOS Technology [J] . M. Ramana Reddy, N.S Murthy Sharma, P. Chandra Sekhar International Journal of VLSI Design & Communication Systems . 2016,第1期

机译：采用90NM CMOS技术的射频接收器前端低功耗，低噪声放大器的设计与分析
2. A Wideband Power Amplifier in 45 nm CMOS SOI Technology for X Band Applications [J] . Chen J.-H., Helmi S.R., Jou A.Y.-S., IEEE microwave and wireless components letters . 2013,第11期

机译：X波段应用中采用45 nm CMOS SOI技术的宽带功率放大器
3. A LOW-POWER 3.2-9.7 GHz ULTRAWIDEBAND LOW-NOISE AMPLIFIER WITH EXCELLENT STOP-BAND REJECTION USING 0.18-μm CMOS TECHNOLOGY [J] . Jin-Fa Chang, Yo-Sheng Lin Microwave and optical technology letters . 2012,第5期

机译：采用0.18μmCMOS技术的具有出色阻带抑制功能的低功耗3.2-9.7 GHz超宽带低噪声放大器
4. 60GHz and 80GHz Wide Band Power Amplifier MMICs in 90nm CMOS Technology [C] . Naoyuki Kurita, Hiroshi Kondoh IEEE Radio Frequency Integrated Circuits Symposium . 2009

机译：90nm CMOS技术中60GHz和80GHz宽带功率放大器MMIC
5. Design of a wideband low-power continuous-time sigma-delta (SigmaDelta) analog-to-digital converter (ADC) in 90nm CMOS technology. [D] . Chen, Fang. 2009

机译：采用90nm CMOS技术的宽带低功耗连续时间sigma-delta（SigmaDelta）模数转换器（ADC）的设计。
6. 2.4 GHz CMOS Power Amplifier with Mode-Locking Structure to Enhance Gain [O] . Changhyun Lee, Changkun Park -1

机译：具有锁模结构的2.4 GHz CMOS功率放大器可增强增益
7. A low-power high-gain LNA for the 60GHz band in a 65 nm CMOS technology [O] . Kraemer, Michael, Dragomirescu, Daniela, Plana, Robert 2009

机译：采用65 nm CMOS技术的60GHz频段的低功耗高增益LNA
8. 205GHz Amplifier in 90nm CMOS Technology. [R] . Ardalan, S. 2017

机译：采用90nm CmOs技术的205GHz放大器。

60GHz and 80GHz wide band power amplifier MMICs in 90nm CMOS technology

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