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Integrated electro-optic Mach-Zehnder switch realized by Zinc in-diffusion

机译:锌内扩散实现集成电光马赫曾德尔开关

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We demonstrate the use of an area selective zinc in-diffusion technique to fabricate an integrated InP/InGaAsP Mach-Zehnder optical switch. The zinc in-diffusion process using a semi-sealed open-tube diffusion furnace was characterized to enable the creation of p-n junctions at a precise depth in selected areas of the device sample. The method is simple, yet highly controllable and reproducible; with the crystal quality remaining intact after the diffusion process is complete. Using this technique an integrated 1x2 Mach-Zehnder optical switch has been fabricated. Our preliminary devices show a switch contrast ratio of 12 dB with a voltage swing of ±2.5 volts. Improving our fabrication process will further optimize the performance of the switch. Nevertheless, very good electrical isolation is obtained between the contacts, which demonstrates the potential of the technique for the fabrication of Photonic Integrated Circuits.
机译:我们演示了使用区域选择性锌扩散技术来制造集成的InP / InGaAsP Mach-Zehnder光开关。使用半密封的开管扩散炉进行的锌扩散过程的特征在于,可以在器件样品的选定区域中的精确深度处创建p-n结。该方法简单,但高度可控且可重现。扩散过程完成后,晶体质量保持不变。使用该技术,已经制造出集成的1x2 Mach-Zehnder光开关。我们的初步设备显示出12 dB的开关对比度,电压摆幅为±2.5伏。改善我们的制造工艺将进一步优化开关的性能。然而,在触点之间获得了很好的电隔离,这证明了制造光子集成电路的技术的潜力。

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