首页> 外文会议>Second Conference on Photonics for Transportation, Oct 15-19, 2001, Sochy, Russia >Design and Mixed Modeling of PhCCD with Vertical Antiblooming Structure
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Design and Mixed Modeling of PhCCD with Vertical Antiblooming Structure

机译:具有垂直抗起霜结构的PhCCD的设计和混合建模

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摘要

Mixed modeling of photosensitive CCD-features is given. The modeling includes simulation of the following design stages: 2D-fabrication process, 2D-potential and electric field distributions and wells providing desired characteristics of the CCD pixel, charge capacity, photosensitivity, noises, modulation transfer function, and output signal using specialized CAD. A new four-phase PhCCD-chip with size of photosensitive area equal to 582(H) x 500(V) pixels, pixel size 17(V) x 11(H) μm, photodiode accumulator, and vertical antiblooming structure has been simulated and designed.
机译:给出了光敏CCD特性的混合建模。建模包括以下设计阶段的仿真:2D制造过程,2D电位和电场分布以及提供专用CCD像素所需特性,电荷容量,光敏性,噪声,调制传递函数和使用专用CAD的输出的阱。模拟了一种新型的四相PhCCD芯片,该芯片的感光面积等于582(H)x 500(V)像素,像素大小为17(V)x 11(H)μm,具有光电二极管累加器和垂直防晕结构。设计。

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