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Analytical Models of CMOS APS

机译:CMOS APS的分析模型

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摘要

The comparison of the CMOS APS and CCD device features has been made. It is expedient to develop high resolution and wide dynamic range systems with the PhCCD and simple systems with CMOS APS, which allows developing camera-on-a-chip. Schematic and layout types of CMOS APS pixel: with 3, 4 transistors per pixel, and with 5 transistors per two pixels have been considered. Pixel mathematical models, which binds photoelectric characteristics and design parameters. Dependencies of main features: reset time, read-out time, output signal amplitude, signal-to-noise ratio, modulation transfer function (MTF), which allows correctly designing the CMOS APS for any purpose applications, have been calculated.
机译:进行了CMOS APS和CCD器件功能的比较。使用PhCCD开发高分辨率和宽动态范围的系统以及使用CMOS APS的简单系统是很方便的,从而可以开发单芯片相机。 CMOS APS像素的示意图和布局类型:每个像素有3个,4个晶体管,每两个像素有5个晶体管。像素数学模型,绑定了光电特性和设计参数。已计算出主要功能的相关性:复位时间,读出时间,输出信号幅度,信噪比,调制传递函数(MTF),可以正确设计用于任何用途的CMOS APS。

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