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首页> 外文会议>SEM IX International Congress on Experimental Mechanics June 5-8, 2000 Orlando, Florida >Fracture and Deformation of Capped Multilayer Dielectric Structures
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Fracture and Deformation of Capped Multilayer Dielectric Structures

机译：封顶多层介电结构的断裂和变形

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摘要

The fracture and deformation properties of thin films of low dielectric constant (low-k) silsesquioxane spin-on glasses are investigated. These materials are softer, more compliant and more susceptible to fracture than the chemical vapor depsited silica and silicon nitride currently used as dielectrics in microelectronic devices. Here the effects of capping spin-on glass films with an overlayer of a hard, stiff, fracture-resistant film of silicon nitride are investigated. The results are analyzed with a model for stress-corrosion cracking in multilayer structures that incorporates a reduction in the mechanical energy release rate for fracture of the low-k film deriving from the constraint of the cap.
机译：研究了低介电常数（低k）倍半硅氧烷旋涂玻璃薄膜的断裂和变形特性。与目前在微电子设备中用作电介质的化学气相沉积的二氧化硅和氮化硅相比，这些材料更柔软，更柔顺且更易于断裂。在此研究了用一层坚硬，坚硬，抗断裂的氮化硅膜覆盖覆盖旋涂玻璃膜的效果。用多层结构中应力腐蚀开裂模型对结果进行了分析，该模型结合了由于盖的约束而导致的低k膜断裂的机械能释放速率的降低。

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