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Implement 0.13 um DRAM in SEM ADC application from 0.15 um DRAM baseline with in-line Review SEM

机译：通过在线查看SEM从0.15 um DRAM基准在SEM ADC应用中实现0.13 um DRAM

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As Integrated Circuit (IC) industry changes rapidly, introducing smaller design rules with shorter life cycles, a new product will be introduced to mass production fabs in a short period of time. In order to rapidly ramp up a new process, in-line defect review and classification is required, since it can provide faster root cause analysis, thus improved yield and fab productivity. Traditionally, it takes approximately one month to optimize an in-line ADR/ADC (Automatic Defect Review/Classification) recipe for a new product. However, this is not sufficient for rapid industrial changes. This study, introduces a time saving idea by the use of a modular recipe concept. This concept enables review of similar layers across multiple products – without the need to re-tune the ADR/ADC recipe elements. Using this method, PSC Fab12A could implement a new in-line ADR/ADC recipe for 0.13 μm products, based on 0.15 μm defect database, within two hours.

机译：随着集成电路（IC）行业的快速变化，引入更短的设计规则和更短的生命周期，一种新产品将在短时间内被引入批量生产工厂。为了快速启动新工艺，需要在线缺陷检查和分类，因为它可以提供更快的根本原因分析，从而提高了良率和工厂生产率。传统上，为新产品优化在线ADR / ADC（自动缺陷检查/分类）配方大约需要一个月。但是，这不足以快速改变工业。这项研究通过使用模块化配方概念介绍了一种节省时间的想法。该概念使您可以查看多个产品中的相似层，而无需重新调整ADR / ADC配方元素。使用这种方法，PSC Fab12A可以在两个小时内基于0.15μm的缺陷数据库为0.13μm的产品实施新的在线ADR / ADC配方。

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来源
《SEMICON China 2004 Technical Programs》|2004年|P.1-5|共5页
会议地点 Shanghai(CN)
作者
Luke Lin; Feng-Ming Kuo; Eric Chou; Johnson Yeh; Ting-Shu Lin; Nurit Raccah; Kfir Dotan;
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作者单位

PowerChip Semiconductor Corp, 12 LI-HSIN RD. I, Science-Based Industrial Park, Hsin-Chu, Taiwan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类工业技术;
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机译：0.13um 32Mb / 64Mb嵌入式DRAM内核，具有高效的冗余性和增强的可测试性
2. 0.13um 32Mb/64Mb embedded DRAM core with high efficient redundancy and enhanced testability [J] . Takaharu Tsuji, Hirohito Kikukawa, Shigeki Tomishima, 電子情報通信学会技術研究報告. 集積回路. Integrated Circuits and Devices . 2002,第2期

机译：0.13um 32MB / 64MB嵌入式DRAM核心，具有高效冗余和增强的可测试性
3. A 10b 50MS/s Low-Power Skinny-Type 0.13um CMOS ADC for CIS Applications [J] . Jung-Eun Song, Dong-Hyun Hwang, Won-Seok Hwang, Journal of The Institute of Electronics Engineers of Korea . 2011,第5期

机译：适用于CIS应用的10b 50MS / s低功耗紧缩型0.13um CMOS ADC
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5. Customer intention as the key to successful CRM implementation: Empirical insights from an SEM application. [D] . Al-Shuridah, Obaid Mobarak. 2005

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Implement 0.13 um DRAM in SEM ADC application from 0.15 um DRAM baseline with in-line Review SEM

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