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Characterization of an InGaN based photoemissive device

机译：基于InGaN的光电发射器件的表征

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InGaN alloy fluctuations have been exploited in many nitride optoelectronic devices. This work reports on the application of InGaN alloy fluctuations in a packaged vacuum electronic device utilizing an InGaN photocathode as the detector element. The resulting image intensifier is the first ever InGaN imaging detector.rnExploitation of the particular InGaN properties of alloy fluctuations has several positive consequences for photocathodes. One, it is advantages because of the possibility of extending the spectral response to the longer wavelengths with lower average indium concentrations.rnTwo, in achieving a longer wavelength response, this lessens the strain at the sapphire-AlN-InGaN interface because a lower average In percentage can be used. Thirdly, the larger bandgap InGaN matrix material will have a lower amount of thermionic emission coupled with this longer wavelength photoresponse. Finally, an InGaN alloy with visible response holds the promise in that it can be grown directly on a sapphire window as opposed to the compression bonding of GaAs as originally reported by Antypas and Edgecumbe.
机译：在许多氮化物光电器件中已经利用了InGaN合金波动。这项工作报告了InGaN合金涨落在将InGaN光电阴极用作检测器元件的真空电子设备封装中的应用。由此产生的图像增强器是有史以来第一台InGaN成像探测器。利用合金涨落的特殊InGaN特性，对光电阴极具有若干积极的影响。一是优点，因为它有可能将光谱响应扩展到具有较低平均铟浓度的更长波长。二，在获得更长的波长响应时，由于较低的平均In可以减轻蓝宝石-AlN-InGaN界面处的应变。可以使用百分比。第三，较大的带隙InGaN基体材料将具有较少的热离子发射，并具有较长的光响应。最后，具有可见响应的InGaN合金具有希望，因为它可以直接在蓝宝石窗口上生长，这与Antypas和Edgecumbe最初报道的GaAs压缩结合相反。

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