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Characterization and deployment of large format, fully depleted, back- illuminated, p-channel CCDs for precision astronomy

机译:大幅面,全耗尽,背照式p通道CCD的特性和部署,用于精密天文学

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We present new characterization results for a large format, 15 μm pixel pitch, 2kx4k format, p-channel CCD fabricated on high-resistivity silicon at Lawrence Berkeley National Laboratory. The fully-depleted device is 300 μm thick and backside illuminated utilizing 4-side buttable packaging. We report on measurements of standard operating characteristics including charge transfer efficiency, readout noise, cosmetics performance, dark current, and well depth. We have also made preliminary measurements of the device's x-Ray energy resolution and tests of device linearity.
机译:我们在劳伦斯伯克利国家实验室展示了在高电阻率硅上制造的大尺寸,15μm像素间距,2kx4k格式,p沟道CCD的新表征结果。完全耗尽的器件厚度为300μm,并采用4面可密封包装进行背面照明。我们报告了标准操作特性的测量结果,包括电荷转移效率,读出噪声,化妆品性能,暗电流和阱深度。我们还对设备的X射线能量分辨率和设备线性进行了初步测量。

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