• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Sensors, systems, and next-generation satellites XIV >Analytical modeling of MTF and quantum efficiency in CCD and CMOS image sensors
【24h】

Analytical modeling of MTF and quantum efficiency in CCD and CMOS image sensors

机译：CCD和CMOS图像传感器中MTF和量子效率的分析模型

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Today, CCD and CMOS image sensors have found many applications in general public domains. However their use for scientific and space applications requires high electro optical performances and strong abilities to predict them prior to the image sensors design and conception. Sensitivity and image quality are two important electro-optical characteristics for an image sensor. The Quantum Efficiency (QE) and the Modulation Transfer Function (MTF) are respectively the common metrics used to quantify them. Because of an important number of parameters influencing the MTF and the QE, their analytical calculation is not an easy task. This paper describes an analytical model of MTF and QE of CCD and CMOS image sensors. The model has been developed in order to take into account a maximum number of parameters: pixel size, photosensitive area size and shape, EPI-layer and substrate doping concentration, junction depth. The effect of top layer oxide stacks on the resulting optical transmission coefficient and so on QE can also be taken into account. The study is established in the case of CMOS photodiode pixels and buried channel CCD pixels. The MTF and QE modeling results are compared with experimental results. MTF and QE measurements are realized on different pixels types having different photosensitive area shapes and using different technologies. A part of these measurements are performed on a frontside-illuminated CMOS sensor and on a thinned backside-illuminated CMOS image sensor, both of them are manufactured using CMOS technology dedicated to image sensors. The other part of MTF and QE measurements are performed on thinned backside-illuminated N-buried channel CCD sensor. Finally the MTF and QE models are used to make performance predictions, and the effects of various parameters on the MTF and the QE are discussed.
机译：如今，CCD和CMOS图像传感器已在一般公共领域中找到了许多应用。然而，它们在科学和太空应用中的使用要求高的电光学性能和强大的能力，以在图像传感器设计和构思之前对其进行预测。灵敏度和图像质量是图像传感器的两个重要的电光特性。量子效率（QE）和调制传递函数（MTF）分别是用于量化它们的通用度量。由于影响MTF和QE的参数数量很多，因此它们的分析计算并非易事。本文描述了CCD和CMOS图像传感器的MTF和QE分析模型。开发该模型是为了考虑最大数量的参数：像素大小，光敏区域大小和形状，EPI层和基板掺杂浓度，结深。还可以考虑顶层氧化物叠层对所得光传输系数等QE的影响。这项研究是建立在CMOS光电二极管像素和掩埋通道CCD像素的情况下的。将MTF和QE建模结果与实验结果进行比较。在具有不同感光区域形状和使用不同技术的不同像素类型上实现MTF和QE测量。这些测量的一部分是在正面照明的CMOS传感器和变薄的背面照明的CMOS图像传感器上执行的，它们都是使用专用于图像传感器的CMOS技术制造的。 MTF和QE测量的其他部分在变薄的背照式N埋通道CCD传感器上执行。最后使用MTF和QE模型进行性能预测，并讨论了各种参数对MTF和QE的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号