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Low dark current LWIR and VLWIR HgCdTe focal plane arrays at AIM

机译：AIM处的低暗电流LWIR和VLWIR HgCdTe焦平面阵列

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In this paper AIM presents an update on its results for both n-on-p and p-on-n low dark current planar MCT photodiode technology LWIR and VLWIR two-dimensional focal plane detector arrays with a cut-off wavelength ＞11μm at 80K and a 640×512 pixel format. The arrays are stitched from two 512×320 pixel photodiode arrays at a 20μm pixel pitch. Thermal dark currents significantly reduced as compared to 'Tennant's Rule 07' at a yet good detection efficiency ＞60％ as well as results from NETD and photo response performance characterization are presented over a wide operating temperature range. The improvements made allow for the same dark current performance at a 20K higher operating temperature than with previous AIM technology. The demonstrated detector performance paces the way for a new generation of higher operating temperature low SWaP LWIR MCT FPAs with a ＜30mK NETD up to a 110K detector operating temperature and with good operability. Alternatively, lower dark currents at common operating temperatures may be attained, enabling cutting edge next generation LWIR/VLWIR detectors for space instruments.
机译：本文中，AIM展示了n-on-p和p-on-n低暗电流平面MCT光电二极管技术LWIR和VLWIR二维焦平面检测器阵列在80K时截止波长＞11μm的结果的更新。以及640×512像素格式。这些阵列是由两个512×320像素光电二极管阵列以20μm像素间距拼接而成的。与'Tennant's Rule 07'相比，热暗电流在检测效率> 60％时显着降低，并且在很宽的工作温度范围内显示了NETD和光响应性能表征的结果。与以前的AIM技术相比，所进行的改进可在20K的工作温度下实现相同的暗电流性能。演示的检测器性能为<30mK NETD到110K的检测器工作温度以及良好的可操作性，为新一代更高工作温度，低SWaP LWIR MCT FPA迈进了道路。或者，可以在常见的工作温度下获得较低的暗电流，从而使尖端的下一代LWIR / VLWIR探测器适用于航天仪器。

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