ELECTROCHEMICAL CHARACTERIZATION OF NITROGEN INCORPORATED TETRAHEDRAL CARBON FILMS GROWN BY A FILTERED CATHODIC VACUUM ARC

机译：阴极阴极真空电弧生长的氮结合四面体碳膜的电化学表征

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Tetrahedral carbon films incorporating nitrogen (taC:N) have been produced on Si, Ta, Ti and electrochemically roughened Ag surfaces using a single commercial filtered cathodic vacuum arc (FCVA) carbon ion source in the presence of nitrogen gas at reduced pressure. Highly resolved Raman spectra under visible laser excitation were obtained for taC:N films only a few nm thick deposited on roughened Ag, including the rather elusive T band characteristic of sp3 hybridized bonding. The electrochemical response of taC:N supported on polished Ta in aqueous solutions was found to be virtually identical to that reported earlier for taC:N films on Si prepared by the simultaneous incidence of a custom made FCVA carbon ion source and a nitrogen ion gun. Reversible kinetics for Ru(NH_3)_6Cl_3 reduction in 1M KC1 and electrocatalytic activity for chlorine evolution and reduction in 1 M HC1 solutions are observed juxtaposed to high overpotentials for hydrogen and oxygen evolution.

机译：含氮（taC：N）的四面体碳膜已在氮气，减压下使用单个商用过滤阴极真空电弧（FCVA）碳离子源在Si，Ta，Ti和电化学粗糙化的Ag表面上制成。对于仅几纳米厚的taC：N薄膜，在粗糙的Ag上沉积，可获得可见激光激发下的高分辨拉曼光谱，其中包括sp3杂化键的相当难以捉摸的T带特征。发现在抛光的水溶液中负载在抛光Ta上的taC：N的电化学响应与先前报道的同时通过定制FCVA碳离子源和氮离子枪同时入射制备的Si上taC：N膜的电化学响应基本相同。观察到Ru（NH_3）_6Cl_3在1M KC1中还原的可逆动力学以及在氯的释放和在1 M HCl溶液中的还原的电催化活性与氢气和氧气的高过电位并列。

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《The Seventh International Symposium on Diamond Materials was Held at the 200th Meeting of the Electrochemical Society, Jointly with the 52nd Meeting of the International Society of Electrochemistry, Sep 2-7, 2001, San Francisco, California》|2001年|p.93-102|共10页
会议地点 San Francisco CA(US);San Francisco CA(US);San Francisco CA(US)
作者
Nelson C. Yee; Qingfang Shi; Wen-Bin Cai; Daniel A. Scherson; Barry Miller;
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Department of Chemistry Case Western Reserve University Cleveland, Ohio 44106, USA;

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原文格式 PDF
正文语种 eng
中图分类化学;
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专利

1. Reflectance and photoluminescence spectra of as grown and hydrogen and nitrogen incorporated tetrahedral amorphous carbon films deposited using an S bend filtered cathodic vacuum arc process [J] . O.S. Panwar, Mohd. Alim Khan, B. Bhattacharjee, Thin Solid Films . 2006,第4期

机译：使用S弯曲过滤阴极真空电弧工艺沉积的氢和氮结合的四面体无定形碳膜的反射和光致发光光谱
2. XPS and XAES studies of as grown and nitrogen incorporated tetrahedral amorphous carbon films deposited by pulsed unfiltered cathodic vacuum arc process [J] . Panwar OS., Aparna Y., Shivaprasad SM., Applied Surface Science . 2004,第1a4期

机译：XPS和XAES研究通过脉冲未过滤阴极真空电弧工艺沉积的和生长的并掺有氮的四面体无定形碳膜
3. Space charge limited conduction and electron paramagnetic resonance studies of as grown and nitrogen incorporated tetrahedral amorphous carbon films deposited by pulsed unfiltered cathodic vacuum arc process [J] . O. S. Panwar, S. K. Gupta, Mohd. Alim Khan Diamond and Related Materials . 2004,第3期

机译：脉冲未过滤阴极真空电弧工艺沉积并掺入氮的四面体非晶碳膜的空间电荷限制传导和电子顺磁共振研究
4. Electrochemical characterization of nitrogen incorporated tetrahedral carbon films grown by a filtered cathodic vacuum arc [C] . Nelson C. Yee, Qingfang Shi, Wen-Bin Cai, International symposium on Diamond Materials . 2002

机译：通过过滤的阴极真空弧长生长的氮的电化学表征氮掺入的四面体碳膜
5. Electrical and Electrochemical Properties of Nitrogen-Containing Tetrahedral Amorphous Carbon (ta-C) Thin Films. [D] . Yang, Xingyi. 2013

机译：含氮四面体非晶碳（ta-C）薄膜的电和电化学性质。
6. Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs [O] . Hae-Jun Seok, Yong-Jin Kang, Jongkuk Kim, 2019

机译：四面体无定形碳制备的过滤阴极阴极真空电弧用于钙钛矿太阳能电池和量子点LED中的空穴传输层
7. \ud Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique\ud [O] . Panwar, O. S., Rupesinghe, Nalin, Amaratunga, G. A. J. 2008

机译：\ UD 使用脉冲过滤阴极真空电弧技术生长和氮掺入四面体无定形碳/硅异质结的场发射\ ud

ELECTROCHEMICAL CHARACTERIZATION OF NITROGEN INCORPORATED TETRAHEDRAL CARBON FILMS GROWN BY A FILTERED CATHODIC VACUUM ARC

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