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首页> 外文会议>The Seventh International Symposium on Diamond Materials was Held at the 200th Meeting of the Electrochemical Society, Jointly with the 52nd Meeting of the International Society of Electrochemistry, Sep 2-7, 2001, San Francisco, California >MICROWAVE PLASMA DEPOSITION OF CVD DIAMOND FILMS FOR MEMS APPLICATIONS
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MICROWAVE PLASMA DEPOSITION OF CVD DIAMOND FILMS FOR MEMS APPLICATIONS

机译：MEMS应用中CVD金刚石膜的微波等离子体沉积

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Selective diamond deposition was carried out on 3-inch silicon substrates at high power (3500 W) and high pressures (55-60 torr) using a surface micromachining technique to fabricate diamond cantilevers and membranes for MEMS applications. Two seeding methods were explored for depositing diamond on silicon dioxide. A grease seeding procedure gave good results on silicon substrates, but the roughness of the deposited diamond film was unacceptable on a silicon dioxide surface. The ultrasonic seeding procedure yielded a smoother diamond film over silicon dioxide. Initial depositions carried out by removing the photoresist resulted in stray/spurious diamond growth in undesired regions. A change was implemented by keeping the photoresist on the seeded substrate and carrying out depositions so that the seeding done on regions covered with photoresist was removed, along with the photoresist, during the hydrogen plasma 'bum off. This change considerably reduced stray diamond growth resulting in easier fabrication of diamond microstructures.
机译：使用表面微加工技术在3英寸硅基板上以高功率（3500 W）和高压（55-60 torr）进行选择性金刚石沉积，以制造用于MEMS应用的金刚石悬臂和膜。研究了两种将金刚石沉积在二氧化硅上的方法。油脂注入程序可以在硅基板上获得良好的结果，但是沉积的金刚石膜的粗糙度在二氧化硅表面上是不可接受的。超声波播种程序在二氧化硅上产生了较光滑的金刚石膜。通过去除光致抗蚀剂进行的初始沉积导致在不希望的区域中杂散/杂散的金刚石生长。通过将光致抗蚀剂保持在接种的衬底上并进行沉积来进行改变，从而在氢等离子体烧坏期间，连同光致抗蚀剂一起去除在被光致抗蚀剂覆盖的区域上完成的接种。这种变化大大减少了杂散钻石的生长，从而使钻石微结构的制造更加容易。

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