The effect of thallium distribution on luminescence of CsI:Tl

机译：distribution分布对CsI：Tl发光的影响

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Luminescence spectra and decays of CsI-Tl evaporated thin layers of "pillar-like" structure with different distributions of activator were studied under UV-VUV and X-ray excitation. The influence of thallium distribution on luminescence is discussed in comparison with CsI-Tl single crystal. Luminescence excitation spectra in the VUV region from 4 to 40 eV of thin layers demonstrated a transfer process very similar to those observed in single crystal. The possibility of using the synchrotron radiation micrometer size X-ray beam for microluminescence study of CsI-Tl thin layers was tested in MICRPROBE station of DCI storage ring of LURE.

机译：在UV-VUV和X射线激发下，研究了CsI-Tl蒸发的具有不同活化剂分布的“柱状”结构薄层的发光光谱和衰变。与CsI-Tl单晶相比，讨论了distribution分布对发光的影响。薄层的4至40 eV的VUV区域中的发光激发光谱表明，转移过程与单晶中观察到的非常相似。在LURE的DCI储存环的MICRPROBE站中，测试了使用同步辐射测微计大小的X射线束研究CsI-Tl薄层的微发光的可能性。

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《Seventh International Symposium on the Physics and Chemistry of Luminescent Materials of The Electrochemical Society, which was held in Boston on November 1-6, 1998.》|1998年|p.195-200|共6页
会议地点 Boston MA(US)
作者
A.N.Belsky; P.N.Garnier; C.Dujardin; C.Pedrini; B.Varrel; Chevallier; A.Firsov;
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正文语种 eng
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The effect of thallium distribution on luminescence of CsI:Tl

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