(Invited) TmSiO As a CMOS-Compatible High-k Dielectric

机译：（邀请）TmSiO作为兼容CMOS的高k电介质

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Novel materials are being aggressively researched for integration in high-k/metal gate CMOS technology, as innovations in the gate stacks are necessary to sustain scaling toward the end of the roadmap. In this paper, we discuss thulium silicate as a candidate dielectric for integration as interfacial layer, focusing on compatibility with the requirements in terms of both process integration and effects on electrical device characteristics. In particular, we demonstrate that thulium silicate provides advantages over conventional chemical oxide interfacial layers in terms of scalability and channel mobility.

机译：目前正在积极研究新型材料，以将其集成到高k /金属栅极CMOS技术中，因为在栅极叠层中进行创新对于维持路线图末尾的缩放是必要的。在本文中，我们讨论了硅酸th作为集成为界面层的候选电介质，重点是在工艺集成和对电子器件特性的影响方面均与要求兼容。特别是，我们证明了硅酸ul在可扩展性和通道迁移率方面比传统的化学氧化物界面层更具优势。

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《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 6》|2016年|79-89|共11页
会议地点 San Diego(US)
作者
E. Dentoni Litta; P.-E. Hellstroem; M. OEstling;
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作者单位

imec, Kapeldreef 75, B-3001 Leuven, Belgium;

KTH Royal Institute of Technology, School of Information and Communication Technology, Electrum 229, SE-I64 40 Kista, Sweden;

KTH Royal Institute of Technology, School of Information and Communication Technology, Electrum 229, SE-I64 40 Kista, Sweden;

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1. Enhanced Channel Mobility at Sub-nm EOT by Integration of a TmSiO Interfacial Layer in HfO₂/TiN High-k/Metal Gate MOSFETs [J] . Dentoni Litta Eugenio, Hellstrom Per-Erik, Ostling Mikael Electron Devices Society, IEE . 2015,第5期

机译：通过在HfO _{2 / TiN High-k /金属栅MOSFET中集成TmSiO界面层，在亚纳米EOT下增强了沟道迁移率}
2. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs [J] . Litta E. Dentoni, Hellstrom P. -E., Ostling M. Solid-State Electronics . 2015,第juna期

机译：TmSiO / HfO2高k /金属栅MOSFET中的阈值电压控制
3. Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper) [J] . Martin M. Frank, SangBum Kim, Stephen L. Brown, Microelectronic Engineering . 2009,第7a9期

机译：缩放MOSFET栅极电介质：从高k到高k？（特邀论文）
4. (Invited) TmSiO As a CMOS-Compatible High-k Dielectric [C] . E. Dentoni Litta, P.-E. Hellstroem, M. OEstling Meeting of The Electrochemical Society . 2016

机译：（邀请）TMSIO作为CMOS兼容的高k电介质
5. High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hafnium-based high-K gate dielectrics and interface engineering for hafnium oxide/germanium CMOS device [D] . Lu, Nan 2006

机译：适用于未来规模化技术的高介电常数电介质和高迁移率半导体：氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
6. Atomic force microscopy data of novel high-k hydrocarbon films synthesized on Si wafers for gate dielectric applications [O] . Jihwan Kwon, Dong-Ok Kim, Sangyeob Lee, 2020

机译：在硅晶片上合成的用于栅极电介质应用的新型高k碳氢化合物薄膜的原子力显微镜数据
7. Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material : Physics and technology of high-k gate dielectrics 5 [O] . Lopes J. M. J., Roeckerath M., Schlom D. G., 2007

机译：非晶态氧化镧L薄膜替代高k材料：高k栅极电介质的物理和技术5

(Invited) TmSiO As a CMOS-Compatible High-k Dielectric

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