Rapid In-Situ Carbon and Oxygen Cleaning of ln_0.53Ga_0.47As(001) and Si_0.5Ge_0.5(110) Surfaces via a H_2 RF Downstream Plasma

著录项

• 来源
  《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 6》|2016年|291-302|共12页
• 会议地点 San Diego(US)
• 作者

  S. Wolf; M. Edmonds; X. Jiang; R. Droopad; N. Yoshida; L. Dong; R. Galatage; S. Siddiqui; B. Sahu; A. Kummel;

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• 作者单位

  Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, USA;

  Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, USA;

  PIE Scientific LLC, San Mateo, California 94402, USA;

  Ingram School of Engineering, Texas State University, 601 University, San Marcos, Texas 78666, USA;

  Applied Materials Inc, 974 E Arques Ave, Sunnyvale, California 94085, USA;

  Applied Materials Inc, 974 E Arques Ave, Sunnyvale, California 94085, USA;

  GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, New York 12020, USA;

  GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, New York 12020, USA;

  GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, New York 12020, USA;

  Department of Chemistry, University of California San Diego, La Jolla, California 92093, USA;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词