CMOS Compatible High Performance ⅢⅤ Devices: Opportunities and Challenges

机译：CMOS兼容的高性能ⅢⅤ器件：机遇与挑战

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Self-aligned InGaAs channel MOSFET has been demonstrated on both InP and Si substrate using CMOS compatible device structure and process flow. Peak transconductance G_msat over 2200 μS/μm has been achieved, at L_ett = 30 nm and supply voltage V_dd = 0.5 V. These processes and devices are well-suited for future generations of high-performance CMOS applications at short gate lengths and tight gate pitches.

机译：已经使用CMOS兼容器件结构和工艺流程在InP和Si衬底上展示了自对准InGaAs沟道MOSFET。在L_ett = 30 nm和电源电压V_dd = 0.5 V的情况下，已经实现了超过2200μS/μm的峰值跨导G_msat。这些工艺和器件非常适合下一代的高性能CMOS应用，其栅极长度短且栅极间距小。。

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《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 6》|2016年|313-319|共7页
会议地点 San Diego(US)
作者
Y. Sun; K. T. Shiu; C. W. Cheng; A. Majumdar; R. Bruce; J. B. Yau; D. Farmer; Y. Zhu; M. Hopstaken; M. M. Frank; T. Ando; K. T. Lee; J. Rozen; D. K. Sadana; V. Narayanan; R. T. Mo; E. Leobandung;
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IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA;

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CMOS Compatible High Performance ⅢⅤ Devices: Opportunities and Challenges

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