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首页> 外文会议>Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 6 >Low Leakage Current Al_2O_3 Metal-Insulator-Mctal Capacitors Formed by Atomic Layer Deposition at Optimized Process Temperature and O_2 Post Deposition Annealing
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Low Leakage Current Al_2O_3 Metal-Insulator-Mctal Capacitors Formed by Atomic Layer Deposition at Optimized Process Temperature and O_2 Post Deposition Annealing

机译：在最佳工艺温度和O_2后沉积退火条件下通过原子层沉积形成的低漏电流Al_2O_3金属-绝缘体-金属电容器

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摘要

High-k oxide material with a high capacitance density, low leakage current density, high-dielectric breakdown voltage and small quadruple voltage coefficient of the capacitance is important for on-chip metal-insulator-metal (MIM) capacitors as well as gate insulators for semiconductor power devices. So in order to improve the quality of such films, a post-deposition process, such as annealing is expected to be effective. In this paper, we carried out various annealing steps after deposition of Al_2O_3 films with thermal ALD. The electrical characteristics of these Al_2O_3 films were evaluated. Annealing was proven to be effective in improving the Al_2O_3 film quality decrease the leakage current and the fixed charge. For O_2 annealing at 400℃ of MIM capacitor structures containing Al_2O_3 films deposited with thermal ALD using H_2O at a relatively low temperature of 75℃. We achieved a leakage current density of 10~(-9)A/cm~2 level and a capacitance density above 10fF/μm~2. However, it it is necessary to improve the voltage dependence of the capacitance. For future optimization not only the post-deposition process should be investigated but also the ALD deposition itself, including the selection of the oxidizing co-reactant.
机译：具有高电容密度，低漏电流密度，高介电击穿电压和小四倍电压系数电容的高k氧化物材料对于片上金属-绝缘体-金属（MIM）电容器以及用于栅极的绝缘体很重要半导体功率器件。因此，为了提高这种膜的质量，期望诸如退火的后沉积工艺是有效的。在本文中，我们在用热ALD沉积Al_2O_3膜之后执行了各种退火步骤。评价了这些Al_2O_3膜的电特性。事实证明，退火可以有效改善Al_2O_3薄膜质量，降低漏电流和固定电荷。对于包含Al_2O_3薄膜的MIM电容器结构在400℃下进行O_2退火，该结构通过H_2O在75℃的相对低温下通过热ALD沉积。我们实现了10〜（-9）A / cm〜2级的漏电流密度和10fF /μm〜2以上的电容密度。但是，有必要改善电容的电压依赖性。为了将来的优化，不仅应该研究沉积后的过程，还应该研究ALD沉积本身，包括选择氧化共反应物。

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  • 会议地点 San Diego(US)
  • 作者

    Y. Koda; H. Sugita; T. Suwa; R. Kuroda; T. Goto; A. Teramoto; S. Sugawa;

  • 作者单位

    Graduate School of Engineering, Tohoku University, 6-6-11, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan;

    Graduate School of Engineering, Tohoku University, 6-6-11, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan;

    New Industry Creation Hatchery Center, Tohoku University 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan;

    Graduate School of Engineering, Tohoku University, 6-6-11, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan;

    New Industry Creation Hatchery Center, Tohoku University 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan;

    New Industry Creation Hatchery Center, Tohoku University 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan;

    Graduate School of Engineering, Tohoku University, 6-6-11, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan,New Industry Creation Hatchery Center, Tohoku University 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Japan;

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