Analysis of the Retention Characteristic in Three dimensional Junction-less Charge Trapping Memory

著录项

• 来源
  《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 6》|2016年|233-238|共6页
• 会议地点 San Diego(US)
• 作者

  Dandan Jiang; Zhiliang Xia; Lei Jin; Xingqi Zou; Yu Zhang; Zhaoyun Tang; Xinkai Li; Zongliang Huo;

  展开▼
• 作者单位

  Institute of Microelectronics of Chinese Academy of Sciences, Beijing, CHINA,College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  College of Communication Engineering, Chengdu University of Information Technology, Chengdu, CHINA;

  展开▼
• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词