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首页> 外文会议>Silicon Photonics II; Proceedings of SPIE-The International Society for Optical Engineering; vol.6477 >OLED-on-CMOS Integration for Optoelectronic Sensor Applications
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OLED-on-CMOS Integration for Optoelectronic Sensor Applications

机译：用于光电传感器应用的OLED-on-CMOS集成

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Highly-efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for post-processing integration onto the top metal layer of CMOS devices. This has been proven for OLED microdisplays so far. Moreover, OLED-on-CMOS technology may also be excellently suitable for various optoelectronic sensor applications by combining highly efficient emitters, use of low-cost materials and cost-effective manufacturing together with silicon-inherent photodetectors and CMOS circuitry.rnThe use of OLEDs on CMOS substrates requires a top-emitting, low-voltage and highly efficient OLED structure. By reducing the operating voltage for the OLED below 5V, the costs for the CMOS process can be reduced, because a process without high-voltage option can be used. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on different dual-metal layer CMOS test substrates without active transistor area. Afterwards, the different devices were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m~2 for the red p-I-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m~2 for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m~2 for the white fluorescent emitting OLED have been achieved here. Therefore, those OLED stacks are suitable for use in a CMOS process even within a regular 5V process option. Moreover, the operating voltage achieved so far is expected to be reduced further when using different top electrode materials. Integrating such OLEDs on a CMOS-substrate provide a preferable choice for silicon-based optical microsystems targeted towards optoelectronic sensor applications, as there are integrated light barriers, optocouplers, or lab-on-chip devices.
机译：高效，低压有机发光二极管（OLED）非常适合于后处理集成到CMOS器件的顶层金属层上。迄今为止，这已被OLED微显示器证明。此外，通过将高效发射器，使用低成本材料和具有成本效益的制造与硅固有光电探测器和CMOS电路相结合，OLED-on-CMOS技术也可能非常适合各种光电传感器应用。 CMOS基板需要顶部发射，低压且高效的OLED结构。通过将OLED的工作电压降低到5V以下，可以降低CMOS工艺的成本，因为可以使用没有高压选项的工艺。在没有有源晶体管区域的不同双金属层CMOS测试基板上制备了具有掺杂电荷传输层的红色，橙色，白色，绿色和蓝色OLED堆栈。之后，对不同的设备进行测量并就其性能（电流，亮度，电压，与视角的亮度相关性，光学输出耦合等）进行比较。红色pIn型磷光发射OLED堆叠的100cd / m〜2的低工作电压为2.4V，橙色磷光发射OLED堆叠的100cd / m〜2的低工作电压为2.5cd，白色荧光发射的100cd / m〜2的低工作电压为3.2V此处已经实现了发光OLED。因此，即使在常规5V工艺选项内，那些OLED堆栈也适用于CMOS工艺。此外，当使用不同的顶部电极材料时，迄今为止所达到的工作电压有望进一步降低。由于存在集成的光栅，光电耦合器或芯片实验室设备，因此将此类OLED集成在CMOS基板上为面向光电传感器应用的基于硅的光学微系统提供了一个较好的选择。

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