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首页> 外文会议>Silicon photonics and photonic integrated circuits II >PIN photodiodes with significantly improved responsivities implemented in a 0.35μm CMOS/BiCMOS technology
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PIN photodiodes with significantly improved responsivities implemented in a 0.35μm CMOS/BiCMOS technology

机译：采用0.35μmCMOS / BiCMOS技术实现了具有显着改善的响应度的PIN光电二极管

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We report on monolithically integrated PIN photodiodes whose responsivity values could be significantly enhanced over the whole spectral range by the implementation of a Bottom Antireflective Coating (BARC) process module into austriamicrosystems 0.35μm CMOS as well as high-speed SiGe BiCMOS technologies. The resulting photodiodes achieve excellent responsivities together with low capacitances and high bandwidths. We processed finger-photodiodes with interdigitated n+ cathodes, which are especially sensitive at low wavelengths, and photodiodes with full area n+ cathodes on very lightly p-doped start material. We present a method of depositing an antireflective layer directly upon the Si surface of the photodiode by changing the standard process flow as little as possible. With just one additional mask alignment and a well controlled etch procedure we manage to remove the thick intermetal oxide and passivation nitride stack over the photodiodes completely without damaging the Si surface. The following deposition of a CVD Silicon Nitride BARC layer not only minimizes the reflected fraction of the optical power but also acts as passivation layer for the photodiodes. Another benefit of BARC processing is the fact that in-wafer and wafer-to-wafer quantum efficiency variations can be dramatically reduced. In our experiments we deposited BARC layers of different thicknesses that were optimised for violet, red and infrared light. Responsivity measurements resulted in values as high as R=0.27A/W at λ=410nm, R=0.53A/W at λ=670nm and R=0.5A/W at λ=840nm.
机译：我们报告了单片集成的PIN光电二极管，通过将底部抗反射涂层（BARC）工艺模块实施到奥地利微系统0.35μmCMOS以及高速SiGe BiCMOS技术中，其响应度值可以在整个光谱范围内得到显着提高。所得的光电二极管具有出色的响应性以及低电容和高带宽。我们处理了具有交叉指称的n +阴极的手指光电二极管，该电极在低波长下特别敏感，并在非常轻的p掺杂起始材料上处理了具有全面积n +阴极的光电二极管。我们提出了一种通过尽可能少地改变标准工艺流程在光电二极管的Si表面上直接沉积抗反射层的方法。仅需进行一次额外的掩模对准和良好控制的蚀刻程序，我们就可以完全去除光电二极管上方的厚金属间氧化物和钝化氮化物叠层，而不会损坏Si表面。 CVD氮化硅BARC层的后续沉积不仅使光功率的反射部分最小化，而且还充当了光电二极管的钝化层。 BARC处理的另一个好处是可以大大降低晶圆内和晶圆间的量子效率差异。在我们的实验中，我们沉积了针对紫色，红色和红外光优化的不同厚度的BARC层。响应度测量得出的值在λ= 410nm时高达R = 0.27A / W，在λ= 670nm时R = 0.53A / W，在λ= 840nm时R = 0.5A / W。

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