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首页> 外文会议>Sixth International Conference on Solid State Lighting >Light Extraction Enhancement of InGaN MQW by Reducing Total Internal Reflection through Surface Plasmon Effect
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Light Extraction Enhancement of InGaN MQW by Reducing Total Internal Reflection through Surface Plasmon Effect

机译：通过减少表面等离激元效应产生的全内反射来增强InGaN MQW的光提取

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摘要

Coupling of a InGaN/GaN multi-quantum well (MQW) and semitransparent metal layer is shown to result in dramatic enhancement of spontaneous emissibn rate by the surface plasmon effect in the optical spectral range. A five-pairs 18.5nm InGaN/GaN MQW is positioned 175nm, form various thickness (t=5～50nm) silver layer. And periodic patterns (p=0.25～0.8μm) are defined in the top semitransparent metal layer by e-beam lithography, which are grating structures can be incorporated into the metal film to excite surface plasmon between the interference of the metal film and semiconductor. We have experimentally measured photoluminescence intensity and peak position of spontaneous emission of the fabricated structures and compared with the unprocessed samples, whilst still ensuring that most of the emission takes place into the surface plasmon (SP) mode. And the implication of these results for extracting light by reducing total internal reflection (TIR) from light emission diode is discussed.
机译：研究表明，InGaN / GaN多量子阱（MQW）与半透明金属层的耦合通过光谱范围内的表面等离子体激元效应，可显着提高自发发射率。五对18.5nm InGaN / GaN MQW位于175nm处，形成各种厚度（t = 5〜50nm）的银层。通过电子束光刻技术在顶部半透明金属层中定义了周期性图案（p = 0.25〜0.8μm），可以将光栅结构结合到金属膜中，以激发金属等离子体与半导体之间的表面等离激元。我们已通过实验测量了制造结构的光致发光强度和自发发射的峰值位置，并与未处理的样品进行了比较，同时仍确保大部分发射发生在表面等离子体（SP）模式下。并讨论了这些结果对于减少发光二极管的全内反射（TIR）提取光的含义。

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