• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Sixth International Conference on Solid State Lighting >Thermal analysis and design of high power LED packages and systems
【24h】

Thermal analysis and design of high power LED packages and systems

机译：大功率LED封装和系统的热分析和设计

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Thermal transient measurements of high power GaN-based LEDs with multi-chip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multi-chip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multi-chip LEDs has been analogized.
机译：本文介绍并讨论了具有多芯片设计的基于大功率GaN的LED的热瞬态测量。一旦获得了瞬态冷却曲线，就应用结构函数理论确定封装的热阻。对于单芯片，两芯片和四芯片封装，考虑光功率，从结点到环境的总热阻分别为19.87 K / W，10.78 K / W，6.77 K / W。每个组件对封装总热阻的贡献可以从累积结构函数和微分结构函数确定。由于并行散热，发现多芯片封装的总热阻随芯片数量的增加而降低。然而，芯片数量对封装热阻的影响在很大程度上取决于芯片的部分热阻与块状热阻之比。因此，已经模拟了用于封装高功率多芯片LED的重要热设计规则。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号