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Investigation of THz emission by p-GaAsSb

机译:用p-GaAsSb研究太赫兹发射

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摘要

With a suitable electric field imposed and under illumination by ultrashort pulses of near-infrared radiation, GaAsSb emits THz-frequency electromagnetic radiation. We conclude that high-temperature-grown GaAsSb is a new class of THz source.
机译:通过施加适当的电场并在近红外辐射的超短脉冲照射下,GaAsSb会发射太赫兹频率的电磁辐射。我们得出的结论是,高温生长的GaAsSb是一类新型的THz光源。

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  • 来源
    《Solid state-general》|2008年|87-92|共6页
  • 会议地点 Honolulu HI(US);Honolulu HI(US);Honolulu HI(US)
  • 作者单位

    Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2522, Australia;

    Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2522, Australia;

    Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong, New South Wales 2522, Australia;

    Institut fuer Hochfrequenztechnik, Technische Universitaet Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany;

    Institut fuer Hochfrequenztechnik, Technische Universitaet Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany;

    Institut fuer Hochfrequenztechnik, Technische Universitaet Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
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