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Micro and Nano RD Fab Performance and Productivity A Lean Six-Sigma Approach

机译：微型和纳米R＆D Fab性能和生产率精益六西格玛方法

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摘要

A lean six-sigma approach was utilized to improve the performance of a multi-technology R&D cleanroom facility at GE's Global Research Center (GRC). The lean initiative prioritized 4 areas for improvement: 1) fab loading and lot priority, 2) documentation, 3) equipment and, 4) maintenance. A set of four metrics (throughput, uptime, process time, and lot queue time) for each piece of equipment was utilized to measure and drive cleanroom operational performance improvements. Subsequent activities relied on more sophisticated analysis of these metrics as a basis for prioritizing additional improvement tasks. Projects that improved the data management systems, and lot process documentation were also completed.rnAfter implementing the improvements that were uncovered from the lean six-sigma approach, lot cycle time improved more than 3x in the best cases, while a 50% average reduction in equipment queue time was achieved. The initiative resulted in a 16% increase in productivity while overall fab loading grew by 25%. The cleanroom achieved lower research and development costs while simultaneously increasing technology capacity, reducing lot cycle times, and maintaining process control.
机译：GE的全球研究中心（GRC）采用了一种精益的六西格玛方法来改善多技术研发洁净室设施的性能。精益计划优先考虑四个方面的改进：1）晶圆厂的装载和批次优先级； 2）文档； 3）设备； 4）维护。每台设备使用一套四个指标（吞吐量，正常运行时间，处理时间和批队列时间）来衡量和推动洁净室运行性能的改善。随后的活动依赖于对这些指标的更复杂的分析，以此作为确定其他改进任务优先级的基础。改进了数据管理系统和批处理流程文档的项目也已完成。rn在实施精益六西格玛方法发现的改进后，在最佳情况下，批处理周期时间缩短了三倍以上，而平均时间减少了50％。设备排队时间已到。该计划使生产率提高了16％，而整个晶圆厂的负荷却增长了25％。洁净室降低了研发成本，同时增加了技术能力，减少了批处理周期时间并保持了过程控制。

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  • 来源
    《Solid state-general》|2008年|35-46|共12页
  • 会议地点 Honolulu HI(US);Honolulu HI(US);Honolulu HI(US)
  • 作者

    R. J. Olson Jr.; W. Hawkins; P. Piacente; R. Frank; J. Deluca; L. Douglas; G. Trant;

  • 作者单位

    GE Global Research, Micro and Nano Structures Technologies, One Research Circle, Niskayuna, New York 12309 USA;

    GE Global Research, Micro and Nano Structures Technologies, One Research Circle, Niskayuna, New York 12309 USA;

    GE Global Research, Micro and Nano Structures Technologies, One Research Circle, Niskayuna, New York 12309 USA;

    GE Global Research, Micro and Nano Structures Technologies, One Research Circle, Niskayuna, New York 12309 USA;

    GE Global Research, Micro and Nano Structures Technologies, One Research Circle, Niskayuna, New York 12309 USA;

    GE Global Research, Micro and Nano Structures Technologies, One Research Circle, Niskayuna, New York 12309 USA;

    GE Global Research, Micro and Nano Structures Technologies, One Research Circle, Niskayuna, New York 12309 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
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