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Nd:YAG/V:YAG Microchip Laser

机译：Nd：YAG / V：YAG Microchip激光

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Two passively Q-switched Nd:YAG monolithic microchip laser devices were prepared by Nd:YAG and V:YAG crystals diffusion bonding. Stable generation of nanosecond pulses at wavelength 1338 nm was obtained. The first laser, designed for higher mean pump and output power, was based on the monolith crystal which combines in one piece a 4 mm long cooling undoped YAG crystal, 12 mm long active laser part (YAG crystal doped with Nd~(3+) ions), and 0.7mm long V~(3+):YAG saturable absorber. The second one was designed to obtain shorter pulse length. It consists of 4mm long Nd:YAG laser crystal and 0.7mm long V~(3+):YAG saturable absorber. The diameter of both crystals was 5 mm. The initial transmission of the V:YAG part (T_0 = 85%) and the laser resonator was the same in both crystals. Laser mirrors were deposited directly onto monolith faces. The output coupler with reflection 90% for the generated wavelength was placed on the V~(3+)-doped part. The pump mirror (HT @ 808 nm, HR @ 1.3μm) was placed on opposite monolith face. Both microchip lasers were tested under longitudinal diode pumping. The pulse length was stable for all regimes for both crystals. For longer crystal it was equal to 6.2 ns, for the shorter one it was 1.7 ns (FWHM). The wavelength of linearly polarized TEM_(00) laser mode was fixed to 1338 nm for longer crystal. In case of shorter crystal some instabilities were observed for higher mean pump power. The pulse energy depends on the mean pump power. For pulsed pumping with low duty factor the output pulse energy was equal to 131 μJ for longer crystal, and 34 μJ for shorter crystal. This corresponds to peak power 21kW and 20 kW, respectively. In CW pump regime the pulse energy was 37μJ for longer crystal (peak power 6kW), and 16μJ for shorter one (peak power 9.4kW).
机译：通过Nd：YAG和V：YAG晶体扩散键合制备了两个被动调Q开关的Nd：YAG单片微芯片激光器。获得了在波长1338 nm处稳定产生的纳秒脉冲。第一个设计用于更高平均泵浦功率和输出功率的激光器是基于整体晶体，该整体晶体将一个4 mm长的冷却未掺杂YAG晶体，12 mm长的有源激光器部件（掺有Nd〜（3+）的YAG晶体）组合在一起。离子和0.7mm长的V〜（3 +）：YAG饱和吸收剂。第二个被设计为获得较短的脉冲长度。它由4mm长的Nd：YAG激光晶体和0.7mm长的V〜（3 +）：YAG饱和吸收体组成。两个晶体的直径均为5mm。在两个晶体中，V：YAG部分（T_0 = 85％）和激光谐振器的初始透射率相同。激光镜直接沉积在整体表面上。对于所产生的波长，具有90％反射率的输出耦合器放置在V〜（3+）掺杂的部件上。将泵浦反射镜（HT @ 808 nm，HR @1.3μm）放在相对的整体面上。两种微芯片激光器都在纵向二极管泵浦下进行了测试。对于两种晶体的所有方案，脉冲长度都是稳定的。对于较长的晶体，它等于6.2 ns，对于较短的晶体，它等于1.7 ns（FWHM）。对于更长的晶体，线偏振TEM_（00）激光模式的波长固定为1338 nm。在晶体较短的情况下，对于较高的平均泵浦功率，观察到一些不稳定性。脉冲能量取决于平均泵浦功率。对于低占空比的脉冲泵浦，较长的晶体的输出脉冲能量等于131μJ，较短的晶体的输出脉冲能量等于34μJ。这分别对应于峰值功率21kW和20kW。在连续泵模式下，较长晶体（峰值功率6kW）的脉冲能量为37μJ，较短晶体（峰值功率9.4kW）的脉冲能量为16μJ。

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