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Recent progress in dilute nitride-antimonide materials for photonic and electronic applications

机译:用于光子和电子应用的稀氮化-锑化物材料的最新进展

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This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3μm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55μm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWHM of 30ps and photoresponse of up to 1.6μm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ~330mV lower than that of a conventional AlGaAs/GaAs HBT.
机译:本文回顾了用于光子和电子应用的GaNAsSb材料的最新进展。这篇评论文章中呈现的所有结果和数据均摘自我们以前在参考文献中发表的作品。 6-12。在基于1.3μmGaNAsSb的光电探测器中,实现了12A / W的光敏度和4.5GHz的截止频率。 GaNAsSb / GaAs光波导系统也被证明为1.55μm。基于GaNAsSb的光电导开关具有30ps的FWHM和高达1.6μm的光响应的脉冲响应。由基于GaNAsSb的HBT制成的器件的导通电压比传统的AlGaAs / GaAs HBT的导通电压低约330mV。

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