Effects of 'P-N' Terminations on the Initial Stages of Pore Growth onto n-InP in HCl Aqueous Solution

机译：盐酸溶液中“ P-N”端接对n-InP上孔生长初期的影响

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In this paper we report, for the first time, a galvanostatic control in 1M HCl aqueous solution onto a InP surface that had been previously entirely nitrogenated. The surface nitrogenation required an anodic electrochemical treatment in acidic liquid ammonia (NH_3 liq.). An homogeneous covering film with " P-N " terminations was obtained onto the InP surface properly deoxidized. This thin film is notable for its lack of air ageing and also for its chemical stability in HCl. A galvanostatic control at different current density (10 mA.cm~(-2), 100mA.cm~(-2) and 300mA.cm~(-2)) in 1M HCl was used to identify the effect of this " P-N " terminations on the porosification process. In comparison to a bare surface, a contrasted evolution of the interfacial potential was clearly observed for low current density. As expected, a crystal oriented pore morphology (CO) is obtained onto a bare InP surface whereas "oscillating" current line oriented pore morphology (CLO) is kept onto a surface entirely recovered by a " P-N " film. The presence of the nitrogenated film can therefore be significant on the pore growth evolution in 1M HCl aqueous solution.

机译：在本文中，我们首次报告了在1M HCl水溶液中InP表面先前已完全氮化的恒电流控制。表面氮化需要在酸性液氨（NH_3液体）中进行阳极电化学处理。在适当脱氧的InP表面上获得了带有“ P-N”末端的均匀覆盖膜。该薄膜因缺乏空气老化以及在HCl中的化学稳定性而著称。在不同的电流密度下（10 mA.cm〜（-2），100mA.cm〜（-2）和300mA.cm〜（-2））在1M HCl中进行恒电流控制，以确定该“ PN”的作用。在多孔化过程中终止。与裸露的表面相比，在低电流密度下可以清楚地观察到界面电位的相反变化。如所期望的，在裸InP表面上获得了晶体取向的孔形态（CO），而“振荡”的当前线取向的孔形态（CLO）保持在通过“ P-N”膜完全恢复的表面上。因此，在1M HCl水溶液中，氮化膜的存在对孔的生长可能具有重要意义。

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《State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50)-and-processes at the semiconductor solution interface 3》|2009年|305-312|共8页
会议地点 San Francisco CA(US);San Francisco CA(US);San Francisco CA(US)
作者
A.-M. Goncalves; L. Santinacci; N. Simon; M. Bouttemy; C. Mathieu; A. Etcheberry;
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Lavoisier Institute UMR 8180, University of Versailles, 78035 Versailles Cedex, France;

Lavoisier Institute UMR 8180, University of Versailles, 78035 Versailles Cedex, France;

Lavoisier Institute UMR 8180, University of Versailles, 78035 Versailles Cedex, France;

Lavoisier Institute UMR 8180, University of Versailles, 78035 Versailles Cedex, France;

Lavoisier Institute UMR 8180, University of Versailles, 78035 Versailles Cedex, France;

Lavoisier Institute UMR 8180, University of Versailles, 78035 Versailles Cedex, France;

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Effects of 'P-N' Terminations on the Initial Stages of Pore Growth onto n-InP in HCl Aqueous Solution

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