Electrochemical growth gold buffer layer on H-Si(111) surfaces and their applications

机译：H-Si（111）表面的电化学生长金缓冲层及其应用

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper reviews our recent work about gold electrodeposition on H-terminated Si(111). It is shown that Au(111)/Si(111) epitaxial layers are grown and that the film morphology can be varied according to the deposition conditions (potential and solution pH). At pH = 14 (cyanide solution) selective gold nucleation at the substrate monatomic step edges is observed. A homogeneous nucleation is obtained at pH 4 (chloride solution). In the former case 3D growth occurs and in the latter case ultra smooth buffer layers are obtained. Application of these substrates to formation of magnetic nanostructures with tuneable properties is demonstrated.

机译：本文回顾了我们最近关于在H端基Si（111）上电沉积金的工作。结果表明，生长了Au（111）/ Si（111）外延层，并且可以根据沉积条件（电势和溶液pH）改变膜的形态。在pH = 14（氰化物溶液）时，在底物单原子台阶边缘观察到选择性金成核。在pH 4（氯化物溶液）下获得均相成核。在前一种情况下，会发生3D生长，而在后一种情况下，会获得超光滑的缓冲层。证明了这些基板在具有可调节性质的磁性纳米结构的形成中的应用。

著录项

来源
《State-of-the-art program on compound semiconductors 50 (SOTAPOCS 50)-and-processes at the semiconductor solution interface 3》|2009年|197-207|共11页
会议地点 San Francisco CA(US);San Francisco CA(US);San Francisco CA(US)
作者
P. Allongue; F. Maroun; H. Jurca; R. Cortes; P. Prodhomme; N. Tournerie;
展开▼
作者单位

Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau, France;

Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau, France;

Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau, France;

Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau, France;

Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau, France;

Physique de la Matiere Condensee, Ecole Polytechnique, CNRS, 91128 Palaiseau, France;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词

相似文献

外文文献
中文文献
专利

1. Electrochemical Growth Of Ultraflat Au(111) Epitaxial Buffer Layers On H-si(111) [J] . P. Prodhomme, F. Maroun, R. Cortes, Applied Physicsletters . 2008,第17期

机译：H-si（111）上超平Au（111）外延缓冲层的电化学生长
2. Electrochemical growth of gold on well-defined vicinal H-Si(111) surfaces studied by AFM and XRD [J] . Munford ML., Maroun F., Cortes R., Surface Science . 2003,第1a3期

机译：用原子力显微镜和X射线衍射研究在明确的邻域H-Si（111）表面上金的电化学生长
3. Phenyl layers on H-Si(111) by electrochemical reduction of diazonium salts: monolayer versus multilayer formation [J] . P. Allongue, C. Henry de Villeneuve, G. Cherourier, Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry . 2003,第0期

机译：通过电化学还原重氮盐在H-Si（111）上的苯基层：单层与多层形成
4. Electrochemical growth gold buffer layer on H-Si(111) surfaces and their applications [C] . P. Allongue, F. Maroun, H. Jurca, State-of-the-Art Symposium on Compound Semiconductor . 2009

机译：H-Si（111）表面上的电化学生长金缓冲层及其应用
5. Electrochemical and polarization modulation Fourier transform infrared reflection absorption spectroscopic studies of phospholipid bilayers on a gold(111) electrode surface. [D] . Bin, Xiaomin. 2005

机译：电化学和极化调制傅里叶变换红外反射吸收光谱研究金（111）电极表面上的磷脂双层。
6. Modification of a Shockley-Type Surface State on Pt(111) upon Deposition of Gold Thin Layers [O] . Igor V. Silkin, Yury M. Koroteev, Vyacheslav M. Silkin, 2018

机译：沉积金薄层后对Pt（111）上的Shockley型表面态的改性
7. Electrochemical Layer-by-Layer Growth of Palladium on an Au(111) Electrode Surface : Evidence for Important Role of Adsorbed Pd Complex [O] . Naohara, Hideo, Ye, Shen, Uosaki, Kohei 1998

机译：钯在Au（111）电极表面上的电化学逐层生长：吸附的Pd络合物的重要作用的证据

Electrochemical growth gold buffer layer on H-Si(111) surfaces and their applications

摘要

著录项

相似文献

相关主题

期刊订阅