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Growth Mode Transition of Crysto and Curro Pores in III-V Semiconductors

机译:Ⅲ-Ⅴ族半导体中隐晶和Curr孔的生长模式转变

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摘要

The formation of crystallographically oriented and current line oriented pores in n-type InP is reviewed and compared to other semiconductors in the light of some new results. A model for the formation of crystallographically oriented pores is presented that reproduced salient features of this pore type rather well. Impedance data together with their model-based evaluation are given and discussed. Some self-organization features of current line oriented pores and their possible relation to self-induced or externally triggered growth mode transitions between the two pore types conclude the paper.
机译:回顾了n型InP中晶体取向孔和电流线取向孔的形成,并根据一些新结果与其他半导体进行了比较。提出了晶体学上定向的孔形成的模型,该模型很好地再现了该孔类型的显着特征。给出并讨论了阻抗数据及其基于模型的评估。本文总结了当前沿线方向的孔的一些自组织特征,以及它们与两种孔类型之间自诱导或外部触发的生长模式转变的可能关系。

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