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首页> 外文会议>STP 1467; International Symposium on Zirconium in the Nuclear Industry; 20040613-17; Stockholm(SE) >Modeling of the Simultaneous Evolution of Vacancy and Interstitial Dislocation Loops in hcp Metals Under Irradiation
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Modeling of the Simultaneous Evolution of Vacancy and Interstitial Dislocation Loops in hcp Metals Under Irradiation

机译：辐射下hcp金属中空位和间隙位错环同时演化的模型

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摘要

We present a model of the homogeneous nucleation and growth of vacancy and interstitial loops in irradiated hcp metals, which allows one to find the size distribution function, the dose dependence of the mean parameters of the dislocation system, and to describe effects due to temperature, material parameters, and initial microstructure. The model is based on a hierarchy of coupled ordinary differential equations. The first two equations are the rate equations for vacancy and interstitial concentrations. Other equations describe random walks of interstitial and vacancy clusters in a size space, i.e., the time dependence of loop densities. As an input, the model contains the capture efficiencies of point defects by loops, which depend self-consistently on the loop size and dislocation density. We have considered two possible scenarios depending on the point defect dilatation volume ratio: (ⅰ) dislocation bias for interstitial atoms and (ⅱ) dislocation bias for vacancies. The model results are qualitatively consistent with experimental observations of a coexistence of interstitial and vacancy dislocation loops on the same habit planes in Zr and other hcp metals. The temperature dependence of the resulting loop size distributions depends strongly on the material properties and the initial microstructure.
机译：我们提出了一个模型，说明了经辐射的hcp金属中空位和间隙环的均匀成核和生长的模型，该模型可以找到尺寸分布函数，位错系统平均参数的剂量依赖性，并描述温度引起的影响，材料参数和初始微观结构。该模型基于耦合的常微分方程的层次结构。前两个方程是空位和间隙浓度的速率方程。其他方程式描述了尺寸空间中的间隙和空位簇的随机游动，即，回路密度的时间依赖性。作为输入，模型包含通过回路捕获点缺陷的效率，这些效率自洽地取决于回路的大小和位错密度。我们已经根据点缺陷膨胀体积比考虑了两种可能的情况：（ⅰ）间隙原子的位错偏差和（ⅱ）空位的位错偏差。该模型的结果与Zr和其他hcp金属的相同习性平面上的间隙和空位错环并存的实验观察在质量上是一致的。所得回路尺寸分布的温度依赖性在很大程度上取决于材料性能和初始微观结构。

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