Material Parameters for Analytical and Numerical Modeling of Si and Strained SiGe Heterostructure Devices

机译：Si和应变SiGe异质结构器件的分析和数值建模的材料参数

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We present calculated values of effective masses, bandgap reduction, and Fermi energy of p-doped Si and strained p-doped SiGe layers. The calculations have been made for Ge concentrations in the range 0 to 30% and boron concentration in the range 10~(18)cm~(-3) to 3x10~(20)cm~(-3). Empirical expressions for the effective masses are given. These expressions and calculated values of the other parameters are convenient for use in computer codes for modeling device processing and performance. To validate the calculated values, we have compared them with the available experimental results. Good agreement between the calculated and the experimental values is found.

机译：我们提出了p掺杂Si和应变p掺杂SiGe层的有效质量，带隙减小和费米能量的计算值。对Ge的浓度范围为0％至30％，硼的浓度范围为10〜（18）cm〜（-3）至3x10〜（20）cm〜（-3）进行了计算。给出了有效质量的经验表达式。其他参数的这些表达式和计算值便于在用于对设备处理和性能进行建模的计算机代码中使用。为了验证计算值，我们将其与可用的实验结果进行了比较。在计算值和实验值之间找到了很好的一致性。

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《Symposium on Advances in Materials Theory and Modeling―Bridging Over Multiple-Length and Time Scales, Apr 16-20, 2001, San Francisco, California》|2001年|p.AA4.24.1-24.6|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
S. C. Jain; A. Mehra; S. Decoutere; W. Schoenmaker; M. Willander;
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正文语种 eng
中图分类无线电电子学、电信技术;
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机译：使用一维电荷控制模型优化应变硅沟道SiGe / Si n-MODFET的器件参数
2. An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates [J] . Shiv Bhushan, Santunu Sarangi, Gopi Krishna S, Journal of semiconductor technology and science . 2013,第4期

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3. An analytical approach of elimination of ambipolarity of DPDG-TFET using strained type Ⅱ staggered SiGeSn heterostructure [J] . Namrata Shaw, Gopa Sen, Bratati Mukhopadhyay Superlattices and microstructures . 2020,第May期

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4. Material parameters for analytical and numerical modeling of Si and strained SiGe heterostructure devices [C] . S. C. Jain, A. Mehra, S. Decoutere, Symposium on Advances in Materials Theory and Modeling--Bridging Over Multiple-Length and Time Scales . 2001

机译：Si和应变SiGe异质结构装置的分析和数值模拟材料参数
5. Advanced modeling concepts and material considerations for III--V heterostructure electron devices on gallium arsenide substrates [D] . Besikci, Cengiz. 1994

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7. An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates [O] . Bhushan Shiv 2013

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Material Parameters for Analytical and Numerical Modeling of Si and Strained SiGe Heterostructure Devices

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