MULTISCALE MODELING OF STRESS-MEDIATED DIFFUSION IN SILICON - VOLUME TENSORS

机译：硅体积张量应力扩散的多尺度建模。

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In a previous paper, we presented a general theoretical treatment of the effect of stress on defect diffusion in Si (M. S. Daw, W. Windl, N. N. Carlson, M. Lauclon, and M. P. Masquelier, to be published in Phys. Rev. B). In this paper, we discuss the calculation of the parameters governing the stress dependence of the diffusivity, which are volume quantities, and present the fully anisotropic volume tensor for vacancy formation in Si.

机译：在之前的论文中，我们介绍了应力对Si中缺陷扩散的影响的一般理论处理（MS Daw，W。Windl，NN Carlson，M。Lauclon和MP Masquelier，将在Phys。Rev. B上发表）。在本文中，我们讨论了控制扩散系数与应力相关性的参数的计算，即体积量，并给出了硅中空位形成的全各向异性体积张量。

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《Symposium on Advances in Materials Theory and Modeling―Bridging Over Multiple-Length and Time Scales, Apr 16-20, 2001, San Francisco, California》|2001年|p.AA9.4.1-4.6|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
W. WINDL; M. S. DAW; N. N. CARLSON; M. LAUDON;
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Digital UNA Laboratories, Motorola, Inc., Austin, TX;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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MULTISCALE MODELING OF STRESS-MEDIATED DIFFUSION IN SILICON - VOLUME TENSORS

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