• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Advances in Materials Theory and Modeling―Bridging Over Multiple-Length and Time Scales, Apr 16-20, 2001, San Francisco, California >Lattice parameter dependence versus composition in semiconductor alloys: the InGaAs case
【24h】

Lattice parameter dependence versus composition in semiconductor alloys: the InGaAs case

机译：晶格参数与半导体合金成分的关系：InGaAs情况

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Following, recent works that report a non linear dependence of the lattice parameter versus composition in some semiconductor alloys the InGaAs/InP system has been investigated. The lattice parameter and the composition of InGaAs/InP lattice matched heterostructures have been independently determined by measuring the high resolution X-ray diffraction profile and the absorption of the X-ray beam diffracted from the InP substrate. In contrast with previous results that stated a linear dependence of the lattice parameter with composition, a 6% larger In content in the InGaAs/InP lattice matched alloy is found. Such result has been confirmed by the analysis of the X-ray fluorescence induced by an electron beam on the layer and on standards made of InAs and GaAs fine ground crystals. The result is in good agreement with the predictions of models based on the elasticity theory applied on a microscopic scale.
机译：接下来，最近的工作报告了InGaAs / InP系统在某些半导体合金中晶格参数与成分之间的非线性相关性。 InGaAs / InP晶格匹配的异质结构的晶格参数和组成已通过测量高分辨率X射线衍射图和从InP衬底衍射的X射线束的吸收来独立确定。与先前的结果表明晶格参数与组成具有线性相关性相反，发现InGaAs / InP晶格匹配合金中的In含量高6％。通过分析由电子束在该层以及由InAs和GaAs精细研磨晶体制成的标准品上引起的X射线荧光，可以证实这种结果。结果与基于微观尺度上应用的弹性理论的模型预测非常吻合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号