• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices - 1999, held April 5-9, 1999, San Francisco, California, U.S.A. >Optical filter for fabricating self-aligned amorphous Si TFTs
【24h】

Optical filter for fabricating self-aligned amorphous Si TFTs

机译：用于制造自对准非晶硅TFT的滤光片

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Self-aligned structures for bottom-gate amorphous Si TFTs provide a number of abvantages, including reduced parasitic capacitance, smaller device dimensions, and improved uniformity in device performance for large-area electronics. A difficult challenge in making self-aligned TFT structures is the necessity of making source/drain contacts that exhibit low contact resistances and that are precisely aligned relative to the gate electrode. In this article, we describe a novel process for fabricating self-aligned amorphous Si TFTs. This process utilizes a pulsed excimer laser (308 nm) to dope or to activate dopants in a-Si to form the source/drain contacts. An important feature of the device design is an optical filter to protect the a-Si channel region from radiation damage during the 308 nm laser process. However, the optical filter allows the transimission of the mu v light for lithography exposure from the backside of the substrate to align the channel region with the gate electrode. This new process enables the fabrication of high performance self-aligned a-Si TFTs with poly-Si source and drain contacts.
机译：底栅非晶Si TFT的自对准结构具有许多优点，包括减小的寄生电容，较小的器件尺寸以及改善的大面积电子器件性能的均匀性。制造自对准TFT结构的一个困难挑战是必须制造出具有低接触电阻并且相对于栅电极精确对准的源极/漏极触点。在本文中，我们描述了一种制造自对准非晶硅TFT的新颖工艺。该工艺利用脉冲准分子激光（308 nm）掺杂或激活a-Si中的掺杂剂以形成源极/漏极触点。器件设计的重要特征是滤光片，可保护a-Si通道区域免受308 nm激光过程中的辐射损害。然而，滤光器允许从基板的背面透射用于光刻曝光的多光，以使沟道区域与栅电极对准。这种新工艺能够制造具有多晶硅源极和漏极触点的高性能自对准a-Si TFT。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号