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首页> 外文会议>Symposium on Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices - 1999, held April 5-9, 1999, San Francisco, California, U.S.A. >Dependence of image transient behavior on operating parameters of amorphous silicon image sensors
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Dependence of image transient behavior on operating parameters of amorphous silicon image sensors

机译：图像瞬态行为对非晶硅图像传感器工作参数的依赖性

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摘要

The growing interests for real-time applications of our amorphous silicon X-ray image sensors requires a better understanding of transient behavior in imaging characteristics. In our pixel structure, which consists of a p-i-n photodiode and an addressing thin film transistor (TFT), the image lag can stem from a number of mechanisms, including charge retention on the photodiode, TFT charge transfer efficiency, and data-line charge sharing. The exact prevailing mechanism depends on the array design and the operating conditions of the sensors. This paper describes the results of our systematic studies on image lag, and its dependence on various operating conditions of the image sensors, such as applied bias, light intensity, frame time, and applied gate voltages. We find that the charge retention in the intrinsic region of the photodiode is an important source of the image lag, and it is correlated to the forward transient characteristics of the diode. This correlation can be explained by the common underlying mechnaisms leading to depletion region formation and charge transport through the diode. Furthermore, we notice that the time dependent decay of the image lag, originated mainly from charge retention in the diode, presents power-law time dependence, which is consistent with the release of trapped charges from a continuous distribution of defect states. We also find only a small variation in the image lag, <
机译：我们对非晶硅X射线图像传感器的实时应用的日益增长的兴趣要求更好地了解成像特性中的瞬态行为。在我们的像素结构中，该结构由一个引脚光电二极管和一个寻址薄膜晶体管（TFT）组成，图像滞后可能源于多种机制，包括光电二极管上的电荷保留，TFT电荷转移效率和数据线电荷共享。确切的主要机制取决于阵列设计和传感器的工作条件。本文介绍了我们对图像延迟进行系统研究的结果，以及其对图像传感器各种工作条件的依赖性，例如所施加的偏压，光强度，帧时间和所施加的栅极电压。我们发现，光电二极管本征区域中的电荷保留是图像滞后的重要来源，并且它与二极管的正向瞬态特性相关。这种相关性可以通过导致耗尽区形成和电荷通过二极管传输的常见基本机理来解释。此外，我们注意到图像滞后的时间依赖性衰减主要源自二极管中的电荷保留，呈现出幂律时间依赖性，这与缺陷状态连续分布中捕获的电荷的释放是一致的。我们还发现图像滞后只有很小的变化，<

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