Defect production during ion-assisted deposition of molybdenum films studied by molecular dynamics

机译：分子动力学研究钼膜离子辅助沉积过程中的缺陷产生

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Low energy argon-ion assisted growth of thin molybdenum films (approx approx 60 A) has been studied by molecular dynamics simulations. The effects of a single ion impact are discussed, but more particularly we consider film growth from a manufacturing viewpoint and examine the properties of the completed films. Results for ion-beam assisted deposition are compared with those for unassisted growth (i.e. physical vapor deposition). Surface morphology, defect generation, argon incorporation, and the various responsible atomic mechanisms are discussed.

机译：通过分子动力学模拟研究了低能氩离子辅助生长的钼薄膜（约60 A）。讨论了单个离子撞击的影响，但更具体地说，我们从制造角度考虑了膜的生长并检查了完成的膜的性能。将离子束辅助沉积的结果与非辅助生长（即物理气相沉积）的结果进行比较。讨论了表面形态，缺陷产生，氩气掺入以及各种负责任的原子机理。

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《Symposium on Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials, held December 1-2, 1997, Boston, Massachusetts, U.S.A.》|1997年|p.51-57|共7页
会议地点 Boston MA(US)
作者
Peter Klaver; Barend Thijsse;
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正文语种 eng
中图分类一般工业技术;
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Defect production during ion-assisted deposition of molybdenum films studied by molecular dynamics

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