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首页> 外文会议>Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US >Ultra-shallow junction formation by excimer laser annealing of ultra-low energy B implanted in Si
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Ultra-shallow junction formation by excimer laser annealing of ultra-low energy B implanted in Si

机译：准分子激光退火注入硅中的超低能量B，形成超浅结

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Formation of ultra-shallow junctions by excimer laser annealing (ELA) of ultra-low energy (1keV -250 eV) B implanted in Si has been investigated. High resolution TEM has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been studied as a function of the laser energy density (melt depth), the implant dose and the number of laser pulses (melt duration). Under appropriate ELA conditions, ultra-shallow profiles, extending to a depth as low as 35 nm with an abrupt profile (2.5 nm/dec), have been achieved. A significant amount of the implanted dopant was lost from the sample following ELA. However, the dopant that was retained in crystal material was fully activated following rapid re-solidification. We developed a theoretical model, that considers the dopant redistribution during melting and regrowth, showing that the fraction of the implanted dopant not activated during ELA was lost from the sample through out diffusion. The lateral distribution of the implanted B following laser annealing has been studied with 2-D measurements, using selective etching and cross-section TEM on samples where the implanted dopant was confined by using test structures including windows opened in silicon dioxide masks and patterned gate stack structures.
机译：研究了通过注入硅中的超低能量（1keV -250 eV）B的准分子激光退火（ELA）形成超浅结的方法。高分辨率TEM已用于评估植入后的损伤和ELA后的晶体恢复。研究了ELA中Si中B的电激活和再分布与激光能量密度（熔化深度），注入剂量和激光脉冲数量（熔化持续时间）的关系。在适当的ELA条件下，已经实现了超浅的轮廓，其延伸到低至35 nm的深度并具有陡峭的轮廓（2.5 nm / dec）。 ELA后，样品中损失了大量的注入掺杂剂。但是，保留在晶体材料中的掺杂剂在快速重新固化后被完全活化。我们建立了一个理论模型，该模型考虑了熔化和再生长过程中掺杂剂的重新分布，表明在ELA中未激活的注入掺杂剂部分通过扩散从样品中损失了。已对激光退火后注入的B的横向分布进行了二维测量，对样品进行了选择性蚀刻和横截面TEM，其中通过使用测试结构将注入的掺杂剂限制在样品上，该测试结构包括在二氧化硅掩模中开口的窗口和图案化的栅堆叠结构。

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