LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors

机译：使用新型Ba和Sr前驱体的BSTO薄膜的LS-MOCVD

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We report the synthesis of new precursors Ba(thd)_2(tmeea) and Sr(thd)_2(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amine, and the LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Thin films of BSTO were grown on Pt(111)/SiO_2/Si(100) substrates by LS-MOCVD using the cocktail source consisting of the conventional Ti precursor Ti(thd)_2(O~iPr)_2 and the new Ba and Sr precursors. As-grown films were characterized by SEM, XRD, XRF, and C-V measurement. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as large as 320. The dependence of composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, and working pressure will be discussed.

机译：我们报告了新的前体Ba（thd）_2（tmeea）和Sr（thd）_2（tmeea）的合成，其中tmeea =三[2-（2-甲氧基乙氧基）乙基]胺，钛酸钡锶的LS-MOCVD （BSTO）薄膜使用这些前体。使用常规Ti前体Ti（thd）_2（O〜iPr）_2和新的Ba和Sr组成的混合源通过LS-MOCVD在Pt（111）/ SiO_2 / Si（100）衬底上生长BSTO薄膜前体。通过SEM，XRD，XRF和C-V测量对成膜薄膜进行表征。 420℃下生长的BSTO薄膜是化学计量的钛酸钡锶锶，表面形貌非常光滑，介电常数高达320。BSTO薄膜的组成，微观结构和电性能与生长温度，退火温度有关。，并将讨论工作压力。

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《Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US》|2003年|P.115-120|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
Hyun Goo Kwon; Youngwoo Oh; Jung Woo Park; Young Kuk Lee; Chang Gyoun Kim; Yunsoo Kim;
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Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea;

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正文语种 eng
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5. Synthesis and characterization of nanostructured BSTO thin-films for microwave applications. [D] . Riehl, Bonnie D. 2004

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7. Some remarks on the paper “Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3 thin films” by J. Srivind, V.S. Nagaretthinam, A.R. Balu Mater. Sci.-Poland, 34 (2016), 393 – 398 [O] . Paweł E. Tomaszewski 2020

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机译：应变对Ls-mOCVD在pt / siO2 / si上生长的（Ba，sr）Ti1 + xO3薄膜介电性能的影响

LS-MOCVD of BSTO Thin Films Using Novel Ba and Sr Precursors

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